公开(公告)号：US10937669B2

公开(公告)日：2021-03-02

申请号：US15989744

申请日：2018-05-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kosuke Fukuda ,  Mikio Nakashima ,  Kazuyoshi Shinohara ,  Hiroyuki Higashi

IPC: H01L21/67

Abstract: A substrate solution-treatment apparatus includes: a substrate holding part for holding a substrate; a nozzle for supplying a treatment solution onto the substrate; a supply line; a flow rate control mechanism including a flow rate meter and a flow rate control valve installed in the supply line; an opening/closing valve installed in the supply line; and a control part for controlling operations of the flow rate control mechanism and the opening/closing valve. The flow rate control mechanism controls the flow rate control valve such that a detection value of the flow rate meter coincides with a flow rate target value provided from the control part. The control part controls the nozzle to supply the treatment solution onto the substrate with the opening/closing valve opened, and provides a first flow rate as the flow rate target value to the flow rate control mechanism.

公开(公告)号：US10685858B2

公开(公告)日：2020-06-16

申请号：US16019773

申请日：2018-06-27

Applicant: Tokyo Electron Limited

Inventor： Hiroyuki Higashi ,  Takahisa Otsuka ,  Kazuyoshi Shinohara ,  Takashi Nakazawa ,  Seiya Fujimoto ,  Yuichi Douki

IPC: H01L21/67 ,  H01L21/3065 ,  H01L21/306

Abstract: The substrate processing method according to an exemplary embodiment includes a low temperature dissolving processing and an etching processing. The low temperature dissolving processing dissolves oxygen in an alkaline aqueous solution cooled to a predetermined temperature lower than the room temperature. The etching processing etches a substrate by supplying the alkaline aqueous solution in which oxygen is dissolved to the substrate.

公开(公告)号：US20160093517A1

公开(公告)日：2016-03-31

申请号：US14851388

申请日：2015-09-11

Applicant: Tokyo Electron Limited

Inventor： Hiroyuki Higashi ,  Gentaro Goshi ,  Takahisa Otsuka

IPC: H01L21/67 ,  H01L21/02 ,  B08B3/10

CPC classification number: H01L21/67051 ,  B08B3/02 ,  H01L21/02052

Abstract: Disclosed is a substrate liquid processing method. The method includes: supplying a first processing liquid to a central portion of a substrate at a first flow rate by a first nozzle while rotating the substrate using a substrate holding unit; supplying a second processing liquid to a location between the central portion and an outer circumferential end of the substrate by a second nozzle while supplying the first processing liquid to the central portion of the substrate at the first flow rate; and changing the flow rate of the first processing liquid supplied from the first nozzle to a second flow rate lower than the first flow rate, so as to continue forming of the liquid film on the overall surface of the substrate while supplying the second processing liquid by the second nozzle to the substrate that is formed with a liquid film on the overall surface thereof.

Abstract translation: 公开了一种基板液体处理方法。 该方法包括：使用衬底保持单元旋转衬底，通过第一喷嘴以第一流量将第一处理液体供应到衬底的中心部分; 通过第二喷嘴将第二处理液体供应到基板的中心部分和外周端之间的位置，同时以第一流量将第一处理液体供应到基板的中心部分; 并且将从第一喷嘴供给的第一处理液的流量改变为低于第一流量的第二流量，以便在基板的整个表面上继续形成液膜，同时通过 在其整个表面上形成有液膜的基板的第二喷嘴。

公开(公告)号：US20190006206A1

公开(公告)日：2019-01-03

申请号：US16019773

申请日：2018-06-27

Applicant: Tokyo Electron Limited

Inventor： Hiroyuki Higashi ,  Takahisa Otsuka ,  Kazuyoshi Shinohara ,  Takashi Nakazawa ,  Seiya Fujimoto ,  Yuichi Douki

IPC: H01L21/67 ,  H01L21/3065

Abstract: The substrate processing method according to an exemplary embodiment includes a low temperature dissolving processing and an etching processing. The low temperature dissolving processing dissolves oxygen in an alkaline aqueous solution cooled to a predetermined temperature lower than the room temperature. The etching processing etches a substrate by supplying the alkaline aqueous solution in which oxygen is dissolved to the substrate.

公开(公告)号：US09865483B2

公开(公告)日：2018-01-09

申请号：US14851388

申请日：2015-09-11

Applicant: Tokyo Electron Limited

Inventor： Hiroyuki Higashi ,  Gentaro Goshi ,  Takahisa Otsuka

IPC: H01L21/02 ,  H01L21/67 ,  B08B3/02

CPC classification number: H01L21/67051 ,  B08B3/02 ,  H01L21/02052

Abstract: Disclosed is a substrate liquid processing method. The method includes: supplying a first processing liquid to a central portion of a substrate at a first flow rate by a first nozzle while rotating the substrate using a substrate holding unit; supplying a second processing liquid to a location between the central portion and an outer circumferential end of the substrate by a second nozzle while supplying the first processing liquid to the central portion of the substrate at the first flow rate; and changing the flow rate of the first processing liquid supplied from the first nozzle to a second flow rate lower than the first flow rate, so as to continue forming of the liquid film on the overall surface of the substrate while supplying the second processing liquid by the second nozzle to the substrate that is formed with a liquid film on the overall surface thereof.