公开(公告)号：US20250129482A1

公开(公告)日：2025-04-24

申请号：US18913040

申请日：2024-10-11

Applicant: Tokyo Electron Limited

Inventor： Hitoshi KATO

IPC: C23C16/52 ,  C23C16/455

Abstract: A film-forming method for forming a film on a substrate includes: (A) forming the film on the substrate by, in a process chamber, rotating the substrate, moving one of the substrate or a nozzle gas discharge mechanism relative to another of the substrate or the nozzle gas discharge mechanism, and discharging a film-forming gas toward the substrate from the discharge hole of the nozzle gas discharge mechanism; and (B) after (A), adjusting a film thickness of the film formed on the substrate by, in the process chamber, rotating the substrate, moving one of the substrate or the nozzle gas discharge mechanism relative to another of the substrate or the nozzle gas discharge mechanism, and discharging an etching gas toward the substrate from the discharge hole of the nozzle gas discharge mechanism.

公开(公告)号：US20250129472A1

公开(公告)日：2025-04-24

申请号：US18907922

申请日：2024-10-07

Applicant: Tokyo Electron Limited

Inventor： Hitoshi KATO

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/52

Abstract: A film-forming method for forming a film on a substrate includes (A) forming the film on the substrate by, in a process chamber, rotating the substrate, moving one of the substrate or a nozzle gas discharge mechanism relative to another of the substrate or the nozzle gas discharge mechanism such that a discharge hole of the nozzle gas discharge mechanism passes over a center of the substrate, and discharging a processing gas toward the substrate from the discharge hole; and (B) changing a discharge condition of the processing gas from that in (A), and adjusting a film thickness of the film formed on the substrate by, in the process chamber, rotating the substrate, moving one of the substrate or the nozzle gas discharge mechanism relative to another of the substrate or the nozzle gas discharge mechanism, and discharging the processing gas toward the substrate from the discharge hole.

公开(公告)号：US20240401199A1

公开(公告)日：2024-12-05

申请号：US18668699

申请日：2024-05-20

Applicant: Tokyo Electron Limited

Inventor： Hitoshi KATO ,  Yu WAMURA ,  Kazuhide HASEBE ,  Yuichiro MOROZUMI

IPC: C23C16/455 ,  C23C16/12 ,  C23C16/44 ,  C23C16/458

Abstract: A substrate processing apparatus includes a processing chamber, a turntable rotatably provided inside the processing chamber, a plurality of placing tables rotatable with respect to the turntable and placed with a plurality of substrates, respectively, at positions separated from a rotation center of the turntable, and a plurality of nozzles disposed at positions passing centers of the plurality of placing tables as the turntable rotates. The plurality of nozzles include a processing gas discharger configured to discharge a processing gas with respect to the plurality of substrates on the plurality of placing tables that move with the rotation of the turntable, in a radial range shorter than a radius of the plurality of substrates, and a gas suction section configured to suck a gas at an outer side of the processing gas discharger.

公开(公告)号：US20240401198A1

公开(公告)日：2024-12-05

申请号：US18665885

申请日：2024-05-16

Applicant: Tokyo Electron Limited

Inventor： Hitoshi KATO

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/52

Abstract: A substrate-processing method for processing a substrate includes (A) holding the substrate by a substrate holder in a process chamber and rotating the substrate; (B) discharging gas from a discharge hole of a nozzle gas discharge mechanism toward the substrate that is rotating in (A); and (C) moving the nozzle gas discharge mechanism relative to the substrate in a direction parallel to a surface of the substrate held by the substrate holder so that the discharge hole passes through a center of the substrate. In (B), a flow rate of the gas discharged from the discharge hole is changed in accordance with a surface area of a section of the substrate, the section being faced by the discharge hole of the nozzle gas discharge mechanism that is moving relative to the substrate in (C).

公开(公告)号：US20210249265A1

公开(公告)日：2021-08-12

申请号：US17155551

申请日：2021-01-22

Applicant: Tokyo Electron Limited

Inventor： Hitoshi KATO

IPC: H01L21/02 ,  H01L21/3065 ,  C23C16/24 ,  C23C16/458 ,  C23C16/455 ,  C23C16/52 ,  C23C16/56

Abstract: A method of depositing a silicon film on a recess formed in a surface of a substrate is provided. The substrate is placed on a rotary table in a vacuum vessel, so as to pass through first, second, and third processing regions in the vacuum vessel. An interior of the vacuum vessel is set to a first temperature capable of breaking an Si—H bond. In the first processing region, Si2H6 gas having a temperature less than the first temperature is supplied to form an SiH3 molecular layer on its surface. In the second processing region, a silicon atomic layer is exposed on the surface of the substrate, by breaking the Si—H bond in the SiH3 molecular layer. In the third processing region, by anisotropic etching, the silicon atomic layer on an upper portion of an inner wall of the recess is selectively removed.

公开(公告)号：US20180334745A1

公开(公告)日：2018-11-22

申请号：US15976354

申请日：2018-05-10

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hitoshi KATO

IPC: C23C16/458 ,  C23C16/52 ,  C23C16/455 ,  C23C16/46 ,  H01L21/687

CPC classification number: C23C16/4584 ,  C23C16/45536 ,  C23C16/45578 ,  C23C16/46 ,  C23C16/52 ,  H01L21/68764

Abstract: A substrate processing apparatus includes: a mounting stand for mounting a substrate thereon; a support rod for supporting the mounting stand from below; a revolution mechanism provided below the mounting stand and for supporting the support rod to revolve the mounting stand; a heating part provided between the mounting stand and the revolution mechanism as seen in a height direction and for heating a revolution region of the mounting stand; a heat transfer plate provided between the heating part and the revolution region and for radiating a heat generated from the heating part to the revolution region; and a processing gas supply part for supplying a processing gas to the revolution region. Each of the heating part and the heat transfer plate is divided into a center side and an outer side of the processing container via a gap so as to form a movement path of the support rod.

公开(公告)号：US20180195173A1

公开(公告)日：2018-07-12

申请号：US15862190

申请日：2018-01-04

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hitoshi KATO ,  Yukio OHIZUMI ,  Manabu HONMA ,  Takeshi KOBAYASHI

IPC: C23C16/455 ,  C23C14/50 ,  C23C14/04 ,  H01L21/304 ,  H01L21/67 ,  H01L21/687 ,  C23C14/26 ,  C23C14/22 ,  B05C11/10

CPC classification number: C23C16/45551 ,  B05C11/1031 ,  C23C14/042 ,  C23C14/228 ,  C23C14/26 ,  C23C14/505 ,  C23C16/402 ,  C23C16/45546 ,  C23C16/4584 ,  C23C16/52 ,  H01L21/304 ,  H01L21/67051 ,  H01L21/67126 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/68792

Abstract: There is provided a substrate processing apparatus for performing film formation by supplying a processing gas to a substrate, including: a rotary table provided in a processing container; a mounting stand provided to mount the substrate and configured to be revolved by rotating the rotary table; a processing gas supply part configured to supply a processing gas to a region through which the mounting stand passes by the rotation of the rotary table; a rotation shaft rotatably provided in a portion rotating together with the rotary table and configured to support the mounting stand; a driven gear provided on the rotation shaft; a driving gear provided along an entire circumference of a revolution trajectory of the driven gear to face the revolution trajectory of the driven gear and configured to constitute a magnetic gear mechanism with the driven gear; and a rotating mechanism configured to rotate the driving gear.

公开(公告)号：US20180019114A1

公开(公告)日：2018-01-18

申请号：US15637208

申请日：2017-06-29

Applicant: Tokyo Electron Limited

Inventor： Hitoshi KATO ,  Yutaka TAKAHASHI ,  Masahiro MURATA

IPC: H01L21/02 ,  H01L21/28 ,  C23C16/34

CPC classification number: H01L21/0217 ,  C23C16/045 ,  C23C16/345 ,  C23C16/45534 ,  C23C16/45542 ,  C23C16/45551 ,  C23C16/507 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/28202

Abstract: A method for depositing a silicon nitride film is provided. A nitrided adsorption site is formed in a recess formed in a surface of a substrate by supplying an ammonia-containing gas to the substrate for nitriding the surface of the substrate including the recess. A non-adsorption site is formed in a predetermined upper area of the recess by adsorbing a chlorine-containing gas on the nitride adsorption site in the predetermined upper area by physical adsorption. The predetermined upper area ranges from an upper end of the recess to a predetermined depth of the recess. A silicon-containing gas is adsorbed on the nitride adsorption site other than the predetermined upper area so as to deposit a silicon nitride film by a chemical reaction between the adsorbed ammonia-containing gas and the adsorbed silicon-containing gas. The nitride adsorption site includes a bottom surface of the recess.

公开(公告)号：US20170268104A1

公开(公告)日：2017-09-21

申请号：US15617102

申请日：2017-06-08

Applicant: Tokyo Electron Limited

Inventor： Hitoshi KATO ,  Jun SATO ,  Masahiro MURATA ,  Kentaro OSHIMO ,  Tomoko SUGANO ,  Shigehiro MIURA

IPC: C23C16/458 ,  C23C16/455 ,  C23C16/34 ,  H01L21/02 ,  C23C16/507

CPC classification number: C23C16/4584 ,  C23C16/345 ,  C23C16/45519 ,  C23C16/45538 ,  C23C16/45551 ,  C23C16/507 ,  C23C16/52 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228

Abstract: A method for processing a substrate is provided. According to the method, a process gas is supplied to a surface of a substrate, and then a separation gas is supplied to the surface of the substrate. Moreover, a first plasma processing gas is supplied to the surface of the substrate in a first state in which a distance between the first plasma generation unit and the turntable is set at a first distance, and a second plasma processing gas is supplied to the surface of the substrate in a second state in which a distance between the second plasma generation unit and the turntable is set at a second distance shorter than the first distance. Furthermore, the separation gas is supplied to the surface of the substrate.

公开(公告)号：US20160138159A1

公开(公告)日：2016-05-19

申请号：US14936759

申请日：2015-11-10

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hitoshi KATO ,  Shigehiro MIURA ,  Hiroyuki KIKUCHI ,  Katsuyoshi AIKAWA

IPC: C23C16/455 ,  C23C16/458 ,  H01L21/677

CPC classification number: C23C16/4584 ,  C23C16/4408 ,  C23C16/45551 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/68792

Abstract: A film forming apparatus of forming a film by supplying a process gas onto a substrate includes a rotation table having a loading region and is configured to revolve the substrate loaded on the loading region; a process gas supply mechanism configured to supply the process gas to a gas supply region to perform film formation on the substrate repeatedly passing through the gas supply region a plurality of times by revolution of the substrate; a first gear disposed on the other surface side of the rotation table and rotated in a rotation direction of the rotation table; a second gear configured with planetary gears engaging with the first gear, disposed to be revolved together with the loading region, and configured to rotate the loading region so as to allow the substrate to be rotated.

Abstract translation: 通过在基板上提供处理气体来形成膜的成膜装置包括具有装载区域的旋转台，其被构造成使装载在装载区域上的基板旋转; 处理气体供给机构，被配置为将处理气体供给到气体供给区域，以在基板上通过基板的旋转多次重复地穿过气体供给区域进行成膜; 第一齿轮，设置在所述旋转台的另一个表面侧，并且沿所述旋转台的旋转方向旋转; 配置有与所述第一齿轮接合的行星齿轮的第二齿轮，所述行星齿轮被设置成与所述加载区域一起旋转，并且被配置为使所述加载区域旋转以允许所述基板旋转。