公开(公告)号：US20210265170A1

公开(公告)日：2021-08-26

申请号：US17179436

申请日：2021-02-19

Applicant: Tokyo Electron Limited

Inventor： Seiichi WATANABE ,  Kazuki NARISHIGE ,  Xinhe Jerry LIM ,  Jianfeng XU ,  Yi Hao NG ,  Zhenkang Max LIANG ,  Yujun Nicholas LOO ,  Chiew Wah YAP ,  Bin ZHAO ,  Chai Jin CHUA ,  Takehito WATANABE ,  Koji KAWAMURA ,  Kenji KOMATSU ,  Li JIN ,  Wee Teck TAN ,  Dali LIU

IPC: H01L21/311 ,  H01L21/67 ,  H01L21/683 ,  H01L21/768 ,  H01J37/32

Abstract: A substrate processing method performed in a chamber of a substrate processing apparatus is provided. The chamber includes a substrate support, an upper electrode, and a gas supply port. The substrate processing method includes (a) providing the substrate on the substrate support; (b) supplying a first processing gas into the chamber; (c) continuously supplying an RF signal into the chamber while continuously supplying a negative DC voltage to the upper electrode, to generate plasma from the first processing gas in the chamber; and (d) supplying a pulsed RF signal while continuously supplying the negative DC voltage to the upper electrode, to generate plasma from the first processing gas in the chamber. The process further includes repeating alternately repeating the steps (c) and (d), and a time for performing the step (c) once is 30 second or shorter.