公开(公告)号：US11227767B2

公开(公告)日：2022-01-18

申请号：US16401527

申请日：2019-05-02

Applicant: Tokyo Electron Limited

Inventor： Angelique Raley ,  Kal Subhadeep

IPC: H01L21/033 ,  H01L21/311

Abstract: A substrate is provided with a patterned layer over a stack of one or more processing layers. The processing layers include at least one patterned layer and one etch target layer. CD trimming between the CD of the patterned layer and the CD of the etch target layer may be achieved after the pattern is transferred to the etch target layer. After the etch target layer is patterned, a plasma free gas phase etch process may be used to trim the CD of the etch target layer to finely tune the CD. In an alternate embodiment, plasma etch trim processes may be used in combination with the gas phase etch process. In such an embodiment, partial CD trimming may be achieved via the plasma etching of the various process layers and then additional CD trimming may be achieved by subjecting the etch target layer to the plasma free gas phase etch after the desired pattern has been formed in the etch target layer.

公开(公告)号：US20190341257A1

公开(公告)日：2019-11-07

申请号：US16401527

申请日：2019-05-02

Applicant: Tokyo Electron Limited

Inventor： Angelique Raley ,  Kal Subhadeep

IPC: H01L21/033 ,  H01L21/311

Abstract: A substrate is provided with a patterned layer over a stack of one or more processing layers. The processing layers include at least one patterned layer and one etch target layer. CD trimming between the CD of the patterned layer and the CD of the etch target layer may be achieved after the pattern is transferred to the etch target layer. After the etch target layer is patterned, a plasma free gas phase etch process may be used to trim the CD of the etch target layer to finely tune the CD. In an alternate embodiment, plasma etch trim processes may be used in combination with the gas phase etch process. In such an embodiment, partial CD trimming may be achieved via the plasma etching of the various process layers and then additional CD trimming may be achieved by subjecting the etch target layer to the plasma free gas phase etch after the desired pattern has been formed in the etch target layer.