公开(公告)号：US20240222092A1

公开(公告)日：2024-07-04

申请号：US18606853

申请日：2024-03-15

Applicant: Tokyo Electron Limited

Inventor： Takahiko SATO ,  Tetsuo YOSHIDA

IPC: H01J37/32

CPC classification number: H01J37/32715 ,  H01J2237/2007

Abstract: A plasma processing apparatus includes a plasma processing chamber, a base in the plasma processing chamber, and an electrostatic chuck on the base. The electrostatic chuck includes a dielectric structure having a substrate support surface and a ring support surface, an electrostatic clamp electrode inside the dielectric structure, a bias electrode inside the dielectric structure and below the electrostatic clamp electrode, and at least one conductive structure at least partially located inside the dielectric structure. The dielectric structure has a through-hole extending through the dielectric structure from the substrate support surface or the ring support surface to a lower surface of the dielectric structure. The at least one conductive structure surrounds the through-hole and extends upward from a same level as the bias electrode in a height direction or from a higher level than the bias electrode.