公开(公告)号：US08836945B1

公开(公告)日：2014-09-16

申请号：US14135691

申请日：2013-12-20

Applicant: U.S. Department of Energy

Inventor： Paul R. Ohodnicki, Jr. ,  Congjun Wang ,  Mark A. Andio

IPC: G01N21/00 ,  G01N21/55 ,  G01N21/78

CPC classification number: G01N21/783 ,  G01N2201/0826

Abstract: The disclosure relates to a method of detecting a change in a chemical composition by contacting a conducting oxide material with a monitored stream, illuminating the conducting oxide material with incident light, collecting exiting light, monitoring an optical signal based on a comparison of the incident light and the exiting light, and detecting a shift in the optical signal. The conducting metal oxide has a carrier concentration of at least 1017/cm3, a bandgap of at least 2 eV, and an electronic conductivity of at least 10−1 S/cm, where parameters are specified at the gas stream temperature. The optical response of the conducting oxide materials is proposed to result from the high carrier concentration and electronic conductivity of the conducting metal oxide, and the resulting impact of changing gas atmospheres on that relatively high carrier concentration and electronic conductivity. These changes in effective carrier densities and electronic conductivity of conducting metal oxide films and nanoparticles are postulated to be responsible for the change in measured optical absorption associated with free carriers. Exemplary conducting metal oxides include but are not limited to Al-doped ZnO, Sn-doped In2O3, Nb-doped TiO2, and F-doped SnO2.

Abstract translation: 本公开涉及一种通过使导电氧化物材料与监测的流体接触来检测化学组成的变化的方法，用入射光照射导电氧化物材料，收集离开的光，基于入射光的比较监测光信号 和出射光，并检测光信号的偏移。 导电金属氧化物的载流子浓度至少为1017 / cm3，带隙为至少2eV，电子传导率为至少10-1S / cm，其中在气流温度下规定了参数。 提出导电氧化物材料的光学响应是由导电金属氧化物的高载流子浓度和电子导电性引起的，并且由此产生的气体气氛变化对载流子浓度和电导率的影响。 假设导电金属氧化物膜和纳米颗粒的有效载流子密度和电子导电性的这些变化是造成与游离载体相关的测量的光吸收的变化的原因。 示例性的导电金属氧化物包括但不限于Al掺杂的ZnO，掺杂Sn的In 2 O 3，掺杂Nb的TiO 2和掺杂F的SnO 2。