公开(公告)号：US11387103B1

公开(公告)日：2022-07-12

申请号：US16863489

申请日：2020-04-30

Applicant: U.S. Government as Represented by the Secretary of the Army

Inventor： Jeffrey Warrender ,  Quentin Hudspeth

IPC: H01L21/205 ,  H01L21/02 ,  D01F9/08 ,  C23C14/06 ,  C23C14/28

Abstract: Semiconductor nanofibers are produced at room temperature in a pressure vessel. A semiconductor wafer and metal catalyst are introduced into the pressure vessel. The pressure vessel is filled with a background gas. A nanofiber growth element is introduced into the pressure vessel. For example, the semiconductor may be ablated by a laser. The semiconductor is retained in the pressure vessel for a prolonged period of time until nanofiber growth appears.