OPTOELECTRONIC SEMICONDUCTOR DEVICE
    1.
    发明申请

    公开(公告)号:US20190157254A1

    公开(公告)日:2019-05-23

    申请号:US16236168

    申请日:2018-12-28

    Abstract: An optoelectronic semiconductor device is disclosed. The optoelectronic semiconductor device includes a matrix substrate including a matrix circuit and a substrate, and a plurality of microsized optoelectronic semiconductor elements disposed separately and disposed on the matrix circuit. Each of the microsized optoelectronic semiconductor elements includes a first electrodeand a second electrode, the matrix circuit includes a plurality of third electrodes and a plurality of fourth electrodes. The first electrodes are coupled with and electrically connected with the third electrodes respectively, or the second electrodes are coupled with and electrically connected with the fourth electrodes respectively. Reflectivities of at least some of junctions between the first electrode and the third electrode, or reflectivities of at least some of junctions between the second electrode and the fourth electrode are less than 20%.

    OPTOELECTRONIC SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20180068995A1

    公开(公告)日:2018-03-08

    申请号:US15696541

    申请日:2017-09-06

    Abstract: An optoelectronic semiconductor device and a manufacturing method are disclosed. The manufacturing method includes steps of: a step of providing a microsized optoelectronic semiconductor element, a step of providing a matrix substrate, a step of electrode alignment and lamination, a step of electrode coupling, a step of illumination and lift-off and a step of removal. The step of electrode coupling is to provide a first light to concentratedly illuminate at least some of the junctions between the first electrodes and the third electrodes or concentratedly illuminate at least some of the junctions between the second electrodes and the fourth electrodes. The step of illumination and lift-off is to provide a second light to concentratedly illuminate at least some of the interfaces between the microsized optoelectronic semiconductor elements and the epitaxial substrate to make the microsized optoelectronic semiconductor elements illuminated by the second light peel off the epitaxial substrate.

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