公开(公告)号：US20140227890A1

公开(公告)日：2014-08-14

申请号：US14253570

申请日：2014-04-15

Applicant: ULTRATECH, INC.

Inventor： Andrew M. Hawryluk ,  Boris Grek ,  David A. Markle

IPC: H01L21/263

CPC classification number: H01L21/2636 ,  H01L21/67115 ,  H01L21/67248

Abstract: Methods and apparatuses are provided for improving the intensity profile of a beam image used to process a semiconductor substrate. At least one photonic beam may be generated and manipulated to form an image having an intensity profile with an extended uniform region useful for thermally processing the surface of the substrate. The image may be scanned across the surface to heat at least a portion of the substrate surface to achieve a desired temperature within a predetermined dwell time. Such processing may achieve a high efficiency due to the large proportion of energy contained in the uniform portion of the beam.

Abstract translation: 提供了用于改善用于处理半导体衬底的光束图像的强度分布的方法和装置。 可以产生和操纵至少一个光子束以形成具有强度分布的图像，其具有用于热处理基板的表面的延伸的均匀区域。 可以跨越表面扫描图像以加热衬底表面的至少一部分以在预定的停留时间内实现期望的温度。 这种处理可以由于束的均匀部分中包含的大量能量而实现高效率。