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公开(公告)号:US20230335419A1
公开(公告)日:2023-10-19
申请号:US17741787
申请日:2022-05-11
Applicant: UNIMICRON TECHNOLOGY CORP.
Inventor: Chin-Sheng Wang , Chia-Yu Peng , KAI-MING YANG , PU-JU LIN , CHENG-TA KO
Abstract: The present invention provides an etching device which comprises an oxygen supplier, so that the etching device of the present invention can etch copper gently by means of the dissolved oxygen in the etching solution to accurately control the etching degree so as to fulfill the stricter requirements of microcircuit manufacturing. The present invention further provides an etching method. Finally, the etching waste solution of the present invention can be recycled to further ameliorate the environmental pollution and reduce the production cost, so the present invention is widely applicable in integrated circuit packaging.
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公开(公告)号:US20240167163A1
公开(公告)日:2024-05-23
申请号:US18088204
申请日:2022-12-23
Applicant: UNIMICRON TECHNOLOGY CORP.
Inventor: YI LING CHEN , WEI TSE HO , CHIN-SHENG WANG , PU-JU LIN , CHENG-TA KO
IPC: C23C18/42 , C23C18/16 , C23C18/32 , H01L21/768 , H01L23/48
CPC classification number: C23C18/42 , C23C18/1637 , C23C18/165 , C23C18/1689 , C23C18/32 , H01L21/76898 , H01L23/481
Abstract: An anti-diffusion substrate structure includes a substrate, a substrate circuit layer, and a chip. The substrate has multiple through holes. Within each of the through holes includes a first metal layer and an anti-diffusion layer plated on the first metal layer. The anti-diffusion layer is an Electroless Palladium Immersion Gold (EPIG) layer or an Electroless Nickel Electroless Palladium Immersion Gold (ENEPIG) layer. The substrate circuit layer is mounted on the substrate and extended on the anti-diffusion layer within each of the through holes. The substrate circuit layer is made of a second metal layer, and a composition of the second metal layer is different from a composition of the first metal layer. The chip is electrically connected to the substrate circuit layer. The anti-diffusion layer is able to better prevent material of the first metal layer from migrating or diffusing to the second metal layer.
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