公开(公告)号：US20160133474A1

公开(公告)日：2016-05-12

申请号：US14537827

申请日：2014-11-10

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chih-Feng Ku ,  Shao-Wei Wang ,  Yi-Hui Lin ,  Tsai-Yu Wen ,  Tsuo-Wen Lu ,  Yu-Ren Wang

IPC: H01L21/28 ,  H01L29/66

CPC classification number: H01L29/6656 ,  H01L21/28035

Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having gate structure thereon, wherein the gate structure comprises a high-k dielectric layer; increasing an ambient pressure around the gate structure to a predetermined pressure by injecting a first gas; reducing the ambient pressure to a base pressure; and forming a spacer around the gate structure.

Abstract translation: 公开了半导体器件的制造方法。 该方法包括以下步骤：提供其上具有栅极结构的衬底，其中栅极结构包括高k电介质层; 通过注入第一气体将栅极结构周围的环境压力增加到预定压力; 将环境压力降低到基础压力; 以及在所述栅极结构周围形成间隔物。

公开(公告)号：US09349599B1

公开(公告)日：2016-05-24

申请号：US14537827

申请日：2014-11-10

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chih-Feng Ku ,  Shao-Wei Wang ,  Yi-Hui Lin ,  Tsai-Yu Wen ,  Tsuo-Wen Lu ,  Yu-Ren Wang

IPC: H01L21/28 ,  H01L29/66

CPC classification number: H01L29/6656 ,  H01L21/28035

Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having gate structure thereon, wherein the gate structure comprises a high-k dielectric layer; increasing an ambient pressure around the gate structure to a predetermined pressure by injecting a first gas; reducing the ambient pressure to a base pressure; and forming a spacer around the gate structure.

Abstract translation: 公开了半导体器件的制造方法。 该方法包括以下步骤：提供其上具有栅极结构的衬底，其中栅极结构包括高k电介质层; 通过注入第一气体将栅极结构周围的环境压力增加到预定压力; 将环境压力降低到基础压力; 以及在所述栅极结构周围形成间隔物。