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公开(公告)号：US20230238058A1
公开(公告)日：2023-07-27
申请号：US17680264
申请日：2022-02-24
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Chia-Wen Wang , Chien-Hung Chen , Chia-Hui Huang , Jen-Yang Hsueh , Ling-Hsiu Chou , Chih-Yang Hsu
CPC classification number: G11C11/5628 , G11C16/3427 , G11C16/10 , G11C16/3459 , G11C16/0483
Abstract: When programming an MLC memory device, the disturb characteristics of a program block having multiple memory cells are measured, and the threshold voltage variations of the multiple memory cells are then acquired based on the disturb characteristics of the program block. Next, multiple initial program voltage pulses are provided according to a predetermined signal level, and multiple compensated program voltage pulses are provided by adjusting the multiple initial program voltage pulses. Last, the multiple compensated program voltage pulses are outputted to the program block for programming the multiple memory cells to the predetermined signal level.
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公开(公告)号：US12119053B2
公开(公告)日：2024-10-15
申请号：US17680264
申请日：2022-02-24
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Chia-Wen Wang , Chien-Hung Chen , Chia-Hui Huang , Jen-Yang Hsueh , Ling-Hsiu Chou , Chih-Yang Hsu
CPC classification number: G11C11/5628 , G11C16/10 , G11C16/3427 , G11C16/3459 , G11C16/0483
Abstract: When programming an MLC memory device, the disturb characteristics of a program block having multiple memory cells are measured, and the threshold voltage variations of the multiple memory cells are then acquired based on the disturb characteristics of the program block. Next, multiple initial program voltage pulses are provided according to a predetermined signal level, and multiple compensated program voltage pulses are provided by adjusting the multiple initial program voltage pulses. Last, the multiple compensated program voltage pulses are outputted to the program block for programming the multiple memory cells to the predetermined signal level.
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