公开(公告)号：US11127621B2

公开(公告)日：2021-09-21

申请号：US16673929

申请日：2019-11-04

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ji Feng ,  Yunfei Li ,  Guohai Zhang ,  Ching Hwa Tey ,  Jingling Wang

IPC: H01L21/762 ,  H01L21/76 ,  H01L21/311 ,  H01L21/265

Abstract: A method of forming a semiconductor device includes following steps. Firstly, a substrate is provided and the substrate has a first semiconductor layer formed thereon. Next, an isolating structure is formed in the first semiconductor layer, and a sacrificial layer is formed on the first semiconductor layer by consuming a top portion of the first semiconductor layer. Then, the sacrificial layer is removed to form a second semiconductor layer, and a portion of the isolating structure is also removed to form a shallow trench isolation (STI), with a top surface of the shallow trench isolation being substantially coplanar with a top surface of the second semiconductor layer.