公开(公告)号：US20180158943A1

公开(公告)日：2018-06-07

申请号：US15890303

申请日：2018-02-06

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yu-Ying Lin ,  Kuan Hsuan KU ,  I-Cheng Hu ,  Chueh-Yang Liu ,  Shui-Yen Lu ,  Yu Shu LIN ,  Chun Yao YANG ,  Yu-Ren Wang ,  Neng-Hui Yang

IPC: H01L29/78 ,  H01L29/417 ,  H01L29/165 ,  H01L29/06 ,  H01L21/225 ,  H01L21/768 ,  H01L21/311 ,  H01L27/092

CPC classification number: H01L29/78 ,  H01L21/31144 ,  H01L21/76877 ,  H01L27/0922 ,  H01L29/0688 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/41783 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/66636

Abstract: A semiconductor device includes a semiconductor substrate, a gate structure formed over the semiconductor substrate, and an epitaxial structure formed partially within the semiconductor substrate. The gate structure includes a gate dielectric layer formed over the semiconductor substrate, a gate electrode formed over the gate dielectric layer, and a spacer formed on side surfaces of the gate dielectric layer and the gate electrode. A laterally extending portion of the epitaxial structure extends laterally at an area below a top surface of the semiconductor substrate in a direction toward an area below the gate structure. A lateral end of the laterally extending portion is below the spacer.