公开(公告)号：US11843046B2

公开(公告)日：2023-12-12

申请号：US17145414

申请日：2021-01-11

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Huai-Tzu Chiang ,  Sheng-Hao Lin ,  Kuan-Hung Liu

IPC: H01L29/778 ,  H01L29/423 ,  H01L29/45 ,  H01L29/66 ,  H01L29/08

CPC classification number: H01L29/7786 ,  H01L29/42316 ,  H01L29/452 ,  H01L29/66431 ,  H01L29/0843 ,  H01L29/66462

Abstract: A high electron mobility transistor (HEMT) includes a buffer layer, a carrier transit layer, a carrier supply layer, a gate, a source electrode and a drain electrode. The buffer layer is on a substrate. The carrier transit layer is on the buffer layer. The carrier supply layer is on the carrier transit layer. The gate is on the carrier supply layer. The source electrode and the drain electrode are at two opposite sides of the gate, wherein each of the source electrode and the drain electrode includes a conductive layer and a conductive oxide layer stacked from bottom to top.

公开(公告)号：US20200251583A1

公开(公告)日：2020-08-06

申请号：US16294893

申请日：2019-03-06

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Huai-Tzu Chiang ,  Sheng-Hao Lin ,  Kuan-Hung Liu

IPC: H01L29/778 ,  H01L29/207

Abstract: According to an embodiment of the present invention, a high electron mobility transistor (HEMT) includes: a buffer layer on a substrate; a carrier transit layer on the buffer layer; a carrier supply layer on the carrier transit layer; a gate electrode on the carrier supply layer; and a source and a drain adjacent to two sides of the gate electrode. Preferably, the carrier supply layer comprises a concentration gradient of aluminum (Al).

公开(公告)号：US10714607B1

公开(公告)日：2020-07-14

申请号：US16294893

申请日：2019-03-06

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Huai-Tzu Chiang ,  Sheng-Hao Lin ,  Kuan-Hung Liu

IPC: H01L31/0256 ,  H01L29/778 ,  H01L29/207

Abstract: According to an embodiment of the present invention, a high electron mobility transistor (HEMT) includes: a buffer layer on a substrate; a carrier transit layer on the buffer layer; a carrier supply layer on the carrier transit layer; a gate electrode on the carrier supply layer; and a source and a drain adjacent to two sides of the gate electrode. Preferably, the carrier supply layer comprises a concentration gradient of aluminum (Al).

公开(公告)号：US20210134994A1

公开(公告)日：2021-05-06

申请号：US17145414

申请日：2021-01-11

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Huai-Tzu Chiang ,  Sheng-Hao Lin ,  Kuan-Hung Liu

IPC: H01L29/778 ,  H01L29/423 ,  H01L29/45 ,  H01L29/66

Abstract: A high electron mobility transistor (HEMT) includes a buffer layer, a carrier transit layer, a carrier supply layer, a gate, a source electrode and a drain electrode. The buffer layer is on a substrate. The carrier transit layer is on the buffer layer. The carrier supply layer is on the carrier transit layer. The gate is on the carrier supply layer. The source electrode and the drain electrode are at two opposite sides of the gate, wherein each of the source electrode and the drain electrode includes a conductive layer and a conductive oxide layer stacked from bottom to top.

公开(公告)号：US10923586B2

公开(公告)日：2021-02-16

申请号：US16521548

申请日：2019-07-24

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Huai-Tzu Chiang ,  Sheng-Hao Lin ,  Kuan-Hung Liu

IPC: H01L29/778 ,  H01L29/45 ,  H01L29/423 ,  H01L29/66 ,  H01L29/12 ,  H01L29/772

Abstract: A high electron mobility transistor (HEMT) includes a buffer layer, a carrier transit layer, a carrier supply layer, a gate, a source electrode and a drain electrode. The buffer layer is on a substrate. The carrier transit layer is on the buffer layer. The carrier supply layer is on the carrier transit layer. The gate is on the carrier supply layer. The source electrode and the drain electrode are at two opposite sides of the gate, wherein each of the source electrode and the drain electrode includes a conductive layer and a conductive oxide layer stacked from bottom to top.

公开(公告)号：US20210020767A1

公开(公告)日：2021-01-21

申请号：US16521548

申请日：2019-07-24

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Huai-Tzu Chiang ,  Sheng-Hao Lin ,  Kuan-Hung Liu

IPC: H01L29/778 ,  H01L29/45 ,  H01L29/423

Abstract: A high electron mobility transistor (HEMT) includes a buffer layer, a carrier transit layer, a carrier supply layer, a gate, a source electrode and a drain electrode. The buffer layer is on a substrate. The carrier transit layer is on the buffer layer. The carrier supply layer is on the carrier transit layer. The gate is on the carrier supply layer. The source electrode and the drain electrode are at two opposite sides of the gate, wherein each of the source electrode and the drain electrode includes a conductive layer and a conductive oxide layer stacked from bottom to top.