公开(公告)号：US09240459B2

公开(公告)日：2016-01-19

申请号：US13773635

申请日：2013-02-22

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Kuang-Hung Huang ,  Jie-Ning Yang ,  Yao-Chang Wang ,  Chi-Sheng Tseng ,  Po-Jui Liao ,  Shih-Chang Chang

IPC: H01L29/66 ,  H01L21/768 ,  H01L29/49 ,  H01L29/51

CPC classification number: H01L29/66545 ,  H01L21/76801 ,  H01L21/76834 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/6653

Abstract: A semiconductor process includes the following step. A stacked structure is formed on a substrate. A contact etch stop layer is formed to cover the stacked structure and the substrate. A material layer is formed on the substrate and exposes a top part of the contact etch stop layer covering the stacked structure. The top part is redressed.

Abstract translation: 半导体工艺包括以下步骤。 在基板上形成层叠结构。 形成接触蚀刻停止层以覆盖层叠结构和基板。 在衬底上形成材料层并暴露覆盖层叠结构的接触蚀刻停止层的顶部。 顶部被纠正。

公开(公告)号：US20140242770A1

公开(公告)日：2014-08-28

申请号：US13773635

申请日：2013-02-22

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Kuang-Hung Huang ,  Jie-Ning Yang ,  Yao-Chang Wang ,  Chi-Sheng Tseng ,  Po-Jui Liao ,  Shih-Chang Chang

IPC: H01L29/66

CPC classification number: H01L29/66545 ,  H01L21/76801 ,  H01L21/76834 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/6653

Abstract: A semiconductor process includes the following step. A stacked structure is formed on a substrate. A contact etch stop layer is formed to cover the stacked structure and the substrate. A material layer is formed on the substrate and exposes a top part of the contact etch stop layer covering the stacked structure. The top part is redressed.

Abstract translation: 半导体工艺包括以下步骤。 在基板上形成层叠结构。 形成接触蚀刻停止层以覆盖层叠结构和基板。 在衬底上形成材料层并暴露覆盖层叠结构的接触蚀刻停止层的顶部。 顶部被纠正。