公开(公告)号：US20200235108A1

公开(公告)日：2020-07-23

申请号：US16842245

申请日：2020-04-07

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Shin-Hung LI

IPC: H01L27/112 ,  H01L23/525

Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a substrate, a resistive random access memory cell, and a semiconductor element. The resistive random access memory cell is on the substrate. The resistive random access memory cell includes a first electrode having a U shape. The semiconductor element is adjoined with an outer sidewall of the first electrode.

公开(公告)号：US20250098209A1

公开(公告)日：2025-03-20

申请号：US18383055

申请日：2023-10-24

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Shin-Hung LI

IPC: H01L29/78 ,  H01L29/10 ,  H01L29/40 ,  H01L29/66

Abstract: A semiconductor device includes a substrate; a first well region disposed in the substrate and with a first electrical property; a second well region with the first electrical property disposed in the substrate and separated from the first well region; a first gate dielectric layer disposed on the first well region and having a first thickness; a second gate dielectric layer, disposed on the second well region, separated from the first gate dielectric layer and having a second thickness less than the first thickness; a first gate electrode disposed on the first gate dielectric layer; a second gate electrode disposed on the second gate dielectric layer and separated from the first gate electrode; a drain region disposed in the first well region; and a source region disposed in the second well region.

公开(公告)号：US20190279994A1

公开(公告)日：2019-09-12

申请号：US15949368

申请日：2018-04-10

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Shin-Hung LI

IPC: H01L27/112 ,  H01L23/525

Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a substrate, a resistive random access memory cell, and a semiconductor element. The resistive random access memory cell is on the substrate. The resistive random access memory cell includes a first electrode having a U shape. The semiconductor element is adjoined with an outer sidewall of the first electrode.