公开(公告)号：US20250072042A1

公开(公告)日：2025-02-27

申请号：US18376450

申请日：2023-10-04

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Tzu-Hsin Chen ,  Mei-Ling Chao ,  Tien-Hao Tang ,  Kuan-cheng Su

IPC: H01L29/78 ,  H01L27/02 ,  H01L29/06 ,  H01L29/08

Abstract: An electrostatic discharge protection device includes a substrate, a well region of a first conductivity type in the substrate, a drain field region and a source field region of a second conductivity type in the well region, a gate structure on the well region and between the drain field region and the source field region, a drain contact region and a source contact region of the second conductivity type respectively in the drain field region and the source field region, a first isolation region in the drain field region and between the drain contact region and the gate structure, and a drain doped region of the first conductivity in the drain field region and between a portion of a bottom surface of the drain contact region and the drain field region.