公开(公告)号：US12224338B2

公开(公告)日：2025-02-11

申请号：US17214932

申请日：2021-03-29

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Huai-Tzu Chiang ,  Sheng-Hao Lin ,  Yi-Chun Chan

IPC: H01L21/31 ,  H01L21/311 ,  H01L29/20 ,  H01L29/66 ,  H01L29/778 ,  H01L29/78

Abstract: An HEMT includes a gallium nitride layer. An aluminum gallium nitride layer is disposed on the gallium nitride layer. A gate is disposed on the aluminum gallium nitride layer. The gate includes a P-type gallium nitride and a schottky contact layer. The P-type gallium nitride contacts the schottky contact layer, and a top surface of the P-type gallium nitride entirely overlaps a bottom surface of the schottky contact layer. A protective layer covers the aluminum gallium nitride layer and the gate. A source electrode is disposed at one side of the gate, penetrates the protective layer and contacts the aluminum gallium nitride layer. A drain electrode is disposed at another side of the gate, penetrates the protective layer and contacts the aluminum gallium nitride layer. A gate electrode is disposed directly on the gate, penetrates the protective layer and contacts the schottky contact layer.

公开(公告)号：US20220271153A1

公开(公告)日：2022-08-25

申请号：US17214932

申请日：2021-03-29

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Huai-Tzu Chiang ,  Sheng-Hao Lin ,  Yi-Chun Chan

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/66 ,  H01L21/311 ,  H01L29/78

Abstract: An HEMT includes a gallium nitride layer. An aluminum gallium nitride layer is disposed on the gallium nitride layer. A gate is disposed on the aluminum gallium nitride layer. The gate includes a P-type gallium nitride and a schottky contact layer. The P-type gallium nitride contacts the schottky contact layer, and a top surface of the P-type gallium nitride entirely overlaps a bottom surface of the schottky contact layer. A protective layer covers the aluminum gallium nitride layer and the gate. A source electrode is disposed at one side of the gate, penetrates the protective layer and contacts the aluminum gallium nitride layer. A drain electrode is disposed at another side of the gate, penetrates the protective layer and contacts the aluminum gallium nitride layer. A gate electrode is disposed directly on the gate, penetrates the protective layer and contacts the schottky contact layer.