公开(公告)号：US12140863B2

公开(公告)日：2024-11-12

申请号：US17750421

申请日：2022-05-23

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Su-Yun Fang ,  Chih-Hsien Tang ,  Yi-Lin Tsai

IPC: G03F7/00 ,  H01L21/308 ,  H01L21/311 ,  H01L21/3213

Abstract: An imprint method includes the following steps. A first resist layer is formed on a first substrate. A first imprinting step using a first mold is performed to the first resist layer. A first etching process is performed to the first substrate with the first resist layer as an etching mask after the first imprinting step so as to form a first recess pattern in the first substrate. A second resist layer is formed on the first substrate. A second imprinting step using a second mold is performed to the second resist layer. A second etching process is performed to the first substrate with the second resist layer as an etching mask after the second imprinting step so as to form second recess patterns in the first substrate. A depth of the first recess pattern is greater than a depth of each of the second recess patterns.

公开(公告)号：US20230350287A1

公开(公告)日：2023-11-02

申请号：US17750421

申请日：2022-05-23

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Su-Yun Fang ,  Chih-Hsien Tang ,  Yi-Lin Tsai

IPC: G03F7/00

CPC classification number: G03F7/0002 ,  H01L21/3086

Abstract: An imprint method includes the following steps. A first resist layer is formed on a first substrate. A first imprinting step using a first mold is performed to the first resist layer. A first etching process is performed to the first substrate with the first resist layer as an etching mask after the first imprinting step so as to form a first recess pattern in the first substrate. A second resist layer is formed on the first substrate. A second imprinting step using a second mold is performed to the second resist layer. A second etching process is performed to the first substrate with the second resist layer as an etching mask after the second imprinting step so as to form second recess patterns in the first substrate. A depth of the first recess pattern is greater than a depth of each of the second recess patterns.