公开(公告)号：US20240194668A1

公开(公告)日：2024-06-13

申请号：US18105256

申请日：2023-02-03

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yu-Hsuan Lin ,  Hou-Jen Chiu ,  Mei-Ling Chao ,  Tien-Hao Tang ,  Kuan-Cheng Su

IPC: H01L27/02 ,  H01L27/082 ,  H01L29/08

CPC classification number: H01L27/0259 ,  H01L27/082 ,  H01L29/0808 ,  H01L29/0821 ,  H01L29/735

Abstract: An electrostatic discharge protection structure includes a semiconductor substrate and a first n-type well region, a p-type well region, a first p-type doped region, a second p-type doped region, and an isolation structure disposed in the semiconductor substrate. The p-type well region is located adjacent to the first n-type well region. The first p-type doped region and the second p-type doped region are located above the first n-type well region and the p-type well region, respectively. A first portion of the isolation structure is located between the first p-type doped region and the second p-type doped region in a horizontal direction. An edge of the first n-type well region is located under the first portion. A distance between the first p-type doped region and the edge of the first n-type well region in the horizontal direction is less than a length of the first portion in the horizontal direction.