公开(公告)号：US10260868B2

公开(公告)日：2019-04-16

申请号：US15515407

申请日：2015-09-29

Applicant: UNITY SEMICONDUCTOR

Inventor： Mayeul Durand De Gevigney ,  Philippe Gastaldo

IPC: G01B11/24 ,  G01N21/95 ,  G01N21/88 ,  G01M11/00 ,  G01B9/02 ,  H01L21/66

Abstract: An electronic wafer inspecting method includes: rotating the wavelength transparent wafer, emitting, from a light source coupled with an interferometric device, two light beams, to form, a measurement volume and having a variable inter-fringe distance within the volume, a time signature of a defect intersecting the measurement volume depending on an inter-fringe distance where the defect intersects the volume, the device and the wafer arranged so that the measurement volume extends into a wafer region, collecting the light scattered by the wafer region, emitting a signal representing the variation in the intensity of the collected light per time, detecting in the signal, a frequency of the intensity, the frequency being the time of the passage of a defect through the measurement volume, determining, based on the value of the inter-fringe distance at the location where the defect passes, the position of the defect.

公开(公告)号：US11300520B2

公开(公告)日：2022-04-12

申请号：US16959930

申请日：2018-12-27

Applicant: UNITY SEMICONDUCTOR

Inventor： Mayeul Durand De Gevigney

IPC: G01N21/88 ,  G01N21/95

Abstract: A method and related system for substrate inspection, includes: creating, based on two light beams originating from one light source, a measurement volume at the intersection between the two light beams, the measurement volume containing interference fringes and being positioned to extend into the substrate, the substrate moving relative to the measurement volume in a direction parallel to a main surface S of the substrate; acquiring a measurement signal representative of the light scattered by the substrate, as a function of the location of the measurement volume on the substrate; calculating at least one expected modulation frequency, of an expected signal representative of the passage of a defect of the substrate through the measurement volume; determining values representative of a frequency content of the measurement signal close to the modulation frequency, to constitute a validated signal representative of the presence of defects; and analyzing the signal to locate and/or identify defects.

公开(公告)号：US11092644B2

公开(公告)日：2021-08-17

申请号：US16087056

申请日：2017-03-14

Applicant: UNITY SEMICONDUCTOR

Inventor： Philippe Gastaldo ,  Mayeul Durand De Gevigney ,  Tristan Combier

IPC: G01R31/308 ,  G01R31/28

Abstract: A method for inspecting a wafer including: rotating the wafer about an axis of symmetry (X) perpendicular to a main wafer surface (S); emitting, from a light source coupled with an interferometric device, two incident light beams, to form, at the intersection between the two beams, a measurement volume (V) containing interference fringes so that a region of the main surface (S) of the wafer passes through a fringe, the dimension (Dy) of the measurement volume in a radial direction of the wafer being between 5 and 100 μm; collecting a portion of the light scattered by the wafer region; acquiring the collected light and emitting a signal representing the variation in the collected light intensity as a function of time; and detecting, a frequency component in the collected light, the frequency being the time signature of a defect passage through the measurement volume.

公开(公告)号：US09857313B2

公开(公告)日：2018-01-02

申请号：US15515227

申请日：2015-09-29

Applicant: UNITY SEMICONDUCTOR

Inventor： Mayeul Durand De Gevigney ,  Philippe Gastaldo

IPC: G01N21/00 ,  G01N21/95 ,  G01N21/88

CPC classification number: G01N21/9505 ,  G01B11/2441 ,  G01M11/331 ,  G01N21/8806 ,  G01N21/8851 ,  G01N21/9501 ,  G01N21/9503 ,  G01N2021/8874

Abstract: A method for inspecting a wafer, includes: rotating the wafer about an axis of the wafer, emitting from a light source, two pairs of incident coherent light beams, each pair forming, at the intersection between the two beams, a measurement volume, a portion of the main wafer surface passing through each of the measurement volumes during the rotation, collecting a light beam scattered by the wafer surface, capturing the collected light and emitting an electrical signal representing the variation in the collected light intensity, detecting in the signal, a frequency, being the time signature of a defect through a respective measurement volume, for each detected signature, determining a visibility parameter, on the basis of the visibility determined, obtaining an item of information on the size of the defect, and cross-checking the items of information to determine the size of the defect.