公开(公告)号：US09235677B1

公开(公告)日：2016-01-12

申请号：US14333919

申请日：2014-07-17

Applicant: United Microelectronics Corp.

Inventor： Chun-Ming Chang ,  Wen-Jung Liao ,  Chen-Wei Lee ,  Chun-Liang Hou

IPC: G06F17/50

CPC classification number: G06F17/5081 ,  H01L22/12 ,  H01L22/20

Abstract: The invention provides a thermal uniformity compensating method and apparatus. The steps of the method includes: respectively measuring a plurality of first resistances of a plurality of hot spot patterns of a chip over an hot spot effect, wherein a plurality of pattern densities of the hot spot patterns are different; respectively measuring a plurality of second resistances of each of the hot spot patterns of the chip by a plurality of test keys over the hot spot effect, wherein a plurality of distances between the test keys and the corresponding hot spot pattern are different; establishing a look-up information according to the first and second resistances; analyzing a layout data of the chip for obtaining a pattern density information; and generating a calibrated layout data according to the pattern density information and the look-up information.

Abstract translation: 本发明提供一种热均匀性补偿方法和装置。 该方法的步骤包括：分别在热点效应上测量芯片的多个热点图案的多个第一电阻，其中热点图案的多个图案密度不同; 分别通过多个测试键在热点效应上测量芯片的每个热点图案的多个第二电阻，其中测试键和对应的热点图案之间的多个距离是不同的; 根据第一和第二电阻建立查找信息; 分析用于获取图案密度信息的芯片的布局数据; 以及根据图案密度信息和查找信息生成经校准的布局数据。

公开(公告)号：US20160019330A1

公开(公告)日：2016-01-21

申请号：US14333919

申请日：2014-07-17

Applicant: United Microelectronics Corp.

Inventor： Chun-Ming Chang ,  Wen-Jung Liao ,  Chen-Wei Lee ,  Chun-Liang Hou

IPC: G06F17/50

CPC classification number: G06F17/5081 ,  H01L22/12 ,  H01L22/20

Abstract: The invention provides a thermal uniformity compensating method and apparatus. The steps of the method includes: respectively measuring a plurality of first resistances of a plurality of hot spot patterns of a chip over an hot spot effect, wherein a plurality of pattern densities of the hot spot patterns are different; respectively measuring a plurality of second resistances of each of the hot spot patterns of the chip by a plurality of test keys over the hot spot effect, wherein a plurality of distances between the test keys and the corresponding hot spot pattern are different; establishing a look-up information according to the first and second resistances; analyzing a layout data of the chip for obtaining a pattern density information; and generating a calibrated layout data according to the pattern density information and the look-up information.

Abstract translation: 本发明提供一种热均匀性补偿方法和装置。 该方法的步骤包括：分别在热点效应上测量芯片的多个热点图案的多个第一电阻，其中热点图案的多个图案密度不同; 分别通过多个测试键在热点效应上测量芯片的每个热点图案的多个第二电阻，其中测试键和对应的热点图案之间的多个距离是不同的; 根据第一和第二电阻建立查找信息; 分析用于获取图案密度信息的芯片的布局数据; 以及根据图案密度信息和查找信息生成经校准的布局数据。