公开(公告)号：US20160334456A1

公开(公告)日：2016-11-17

申请号：US14708300

申请日：2015-05-11

Applicant: United Microelectronics Corp.

Inventor： Ya-Ching Cheng ,  Chun-Liang Hou ,  Hsiao-Kwang Yang ,  Chien-Jung Su ,  Guan-Lin Chen

IPC: G01R31/26 ,  G11C29/08

CPC classification number: G01R31/2831 ,  G11C29/006 ,  G11C29/08 ,  G11C29/44 ,  G11C29/50 ,  G11C29/56008

Abstract: The fail bit count data, shmoo data, static noise margins and write margins corresponding to a wafer are measured. Using the above mentioned measurements, variables used to generate the curve are calculated. The variables used to generate the curve include the standard deviation of the fail bit count data, the static noise margins and the write margins. The curve is used to determine optimal operating condition of a fabrication process.

Abstract translation: 测量对应于晶片的故障位计数数据，shmoo数据，静态噪声余量和写入裕度。 使用上述测量，计算用于生成曲线的变量。 用于生成曲线的变量包括故障位计数数据的标准偏差，静态噪声容限和写入余量。 该曲线用于确定制造过程的最佳操作条件。