公开(公告)号：US08980701B1

公开(公告)日：2015-03-17

申请号：US14071672

申请日：2013-11-05

Applicant: United Microelectronics Corp.

Inventor： Shui-Yen Lu ,  Chih-Ho Wang ,  Jhen-Cyuan Li

IPC: H01L21/00 ,  H01L29/66 ,  H01L21/02 ,  H01L29/423 ,  H01L21/84

CPC classification number: H01L29/66795 ,  H01L21/0212 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/845

Abstract: A method of forming a semiconductor device includes the following steps. At least a fin structure is provided on a substrate and a gate structure partially overlapping the fin structure is formed. Then, a dielectric layer is formed on the substrate. Subsequently, a first etching process is performed to remove apart of the dielectric layer to form a first spacer surrounding the gate structure and a second spacer surrounding a sidewall of the fin structure, and a protective layer is formed in-situ to cover the gate structure and the first spacer. Finally, a second etching process is performed to remove a part of the protective layer and totally remove the second spacer.

Abstract translation: 形成半导体器件的方法包括以下步骤。 至少在基板上设置翅片结构，并且形成部分地与翅片结构重叠的栅极结构。 然后，在基板上形成电介质层。 随后，执行第一蚀刻工艺以除去电介质层的间隔，以形成围绕栅极结构的第一间隔件和围绕鳍结构的侧壁的第二间隔件，并且保护层原位形成以覆盖栅极结构 和第一间隔物。 最后，执行第二蚀刻工艺以去除保护层的一部分并完全去除第二间隔物。