-
公开(公告)号：US20190086809A1
公开(公告)日：2019-03-21
申请号：US15711864
申请日：2017-09-21
Applicant: United Microelectronics Corp.
Inventor： Tsung-Chieh Yang , Chin-Che Hsu
IPC: G03F7/42 , H01L21/306 , H01L21/02 , H01L21/768 , H01L21/3213
Abstract: A method for cleaning masking material is provided. A sacrificial layer is patterned to form a masking material over a semiconductor structure. The method includes plasma striping a top surface of the masking material, and cleaning the masking material by a hot ammonia solution.
Search Results
1
records
(took 0.009 seconds)
筛选
AND
AND
过滤
NOT
NOT
Scan to Join
