公开(公告)号：US20220223515A1

公开(公告)日：2022-07-14

申请号：US17166577

申请日：2021-02-03

Applicant: United Microelectronics Corp.

Inventor： To-Wen Tsao ,  Ching-Chang Hsu

IPC: H01L23/528 ,  H01L23/522

Abstract: An interconnect structure is formed in a semiconductor device. The interconnect structure includes a dielectric layer disposed over a substrate. The dielectric layer includes a region and a plurality of protrusions. The protrusions are distributed in the region. A metal layer is disposed on the dielectric layer. Tops of the protrusions are exposed with respect to the metal layer. Any straight path crossing through a central region of the region is always intersected with a portion of the protrusions.

公开(公告)号：US20230238321A1

公开(公告)日：2023-07-27

申请号：US18191894

申请日：2023-03-29

Applicant: United Microelectronics Corp.

Inventor： To-Wen Tsao ,  Ching-Chang Hsu

IPC: H01L23/528 ,  H01L23/522

CPC classification number: H01L23/528 ,  H01L23/5221

Abstract: An interconnect structure is formed on a substrate in a semiconductor device. The interconnect structure includes a dielectric layer and a metal layer. The dielectric layer includes a region and a plurality of protrusions. The metal layer is disposed on the region and between the protrusions, wherein tops of the protrusions are exposed with respect to the metal layer. In a top view of the semiconductor device, the protrusions are distributed in the region. Any straight path crossing through a central region of the region is always intersected with a portion of the protrusions.

公开(公告)号：US20250006634A1

公开(公告)日：2025-01-02

申请号：US18830609

申请日：2024-09-11

Applicant: United Microelectronics Corp.

Inventor： To-Wen Tsao ,  Ching-Chang Hsu

IPC: H01L23/528 ,  H01L23/522

Abstract: An interconnect structure is formed on a substrate in a semiconductor device. The interconnect structure includes a dielectric layer and a metal layer. The dielectric layer includes a region and a plurality of protrusions. The metal layer is disposed on the region and between the protrusions, wherein tops of the protrusions are exposed with respect to the metal layer. In a top view of the semiconductor device, the protrusions are distributed in the region. Any straight path crossing through a central region of the region is always intersected with a portion of the protrusions.

公开(公告)号：US12131993B2

公开(公告)日：2024-10-29

申请号：US18191894

申请日：2023-03-29

Applicant: United Microelectronics Corp.

Inventor： To-Wen Tsao ,  Ching-Chang Hsu

IPC: H01L23/528 ,  H01L23/522

CPC classification number: H01L23/528 ,  H01L23/5221

Abstract: An interconnect structure is formed on a substrate in a semiconductor device. The interconnect structure includes a dielectric layer and a metal layer. The dielectric layer includes a region and a plurality of protrusions. The metal layer is disposed on the region and between the protrusions, wherein tops of the protrusions are exposed with respect to the metal layer. In a top view of the semiconductor device, the protrusions are distributed in the region. Any straight path crossing through a central region of the region is always intersected with a portion of the protrusions.