公开(公告)号：US20250013157A1

公开(公告)日：2025-01-09

申请号：US18447324

申请日：2023-08-10

Applicant: United Microelectronics Corp.

Inventor： Chun-Yi Chang ,  Chien-Hao Chen

IPC: G03F7/00

Abstract: Provided are a manufacturing method of an overlay mark and an overlay measurement method. The manufacturing method includes the following steps. A first stitching overlay mark structure having a plurality of first patterns is formed on a first layer. A second layer is formed on the first layer. A second stitching overlay mark structure having a plurality of second patterns is formed on the second layer. The second stitching overlay mark structure is located above the first stitching overlay mark structure, and from the top view on the second layer, the second patterns and the first patterns are alternately arranged.

公开(公告)号：US20240411221A1

公开(公告)日：2024-12-12

申请号：US18346279

申请日：2023-07-03

Applicant: United Microelectronics Corp.

Inventor： Chun-Yi Chang ,  Chien-Hao Chen

IPC: G03F1/42 ,  G03F1/44 ,  G03F1/68 ,  G03F7/00

Abstract: A photomask set including a first photomask and a second photomask is provided. The first photomask includes a first pattern. The first pattern includes a first main portion and a first stitching portion connected to each other. The first stitching portion includes a first matching portion and a first overlapping portion connected to each other. The second photomask includes a second pattern. The second pattern includes a second main portion and a second stitching portion connected to each other. The second stitching portion includes a second matching portion and a second overlapping portion connected to each other. After the first photomask is aligned with the second photomask, the first matching portion matches the second matching portion, the first overlapping portion overlaps the second pattern, and the second overlapping portion overlaps the first pattern.