公开(公告)号：US20250072071A1

公开(公告)日：2025-02-27

申请号：US18467739

申请日：2023-09-15

Applicant: United Microelectronics Corp.

Inventor： Chih Wen Huang ,  Shih An Huang

IPC: H01L29/10 ,  H01L29/06 ,  H01L29/78

Abstract: A transistor structure includes a substrate, a first well region, a second well region, a gate structure, a drift region, a first doped region, a second doped region, and a first isolation structure. The first well region and the second well region are located in the substrate and adjacent to each other. The gate structure is located on the substrate. The drift region is located in the second well region on one side of the gate structure. The first doped region and the second doped region are located in the substrate on two sides of the gate structure. The first doped region is located in the first well region. The second doped region is located in the drift region. The first isolation structure is located in the substrate between the gate structure and the second doped region. The first well region has a first portion lower than a bottom surface of the drift region. The second well region has a second portion lower than the bottom surface of the drift region. A doping concentration of the first portion of the first well region is greater than a doping concentration of the second portion of the second well region.