公开(公告)号：US12283481B2

公开(公告)日：2025-04-22

申请号：US17353547

申请日：2021-06-21

Applicant: United Microelectronics Corp.

Inventor： Yu Cheng Lin ,  Wei-Chuang Lai

IPC: H01L21/02 ,  H01L21/3105 ,  H01L21/768 ,  H01L23/00

Abstract: A method for manufacturing a semiconductor device is provided. The method includes a step of performing a chemical mechanical polishing process on a first silicon oxide layer to form a planar surface layer; surface treatment is performed on the planar surface layer to form a treated planarization layer, and a second silicon oxide layer is formed on the treated planarization layer.

公开(公告)号：US20220367182A1

公开(公告)日：2022-11-17

申请号：US17353547

申请日：2021-06-21

Applicant: United Microelectronics Corp.

Inventor： Yu Cheng Lin ,  Wei-Chuang Lai

IPC: H01L21/02 ,  H01L21/3105 ,  H01L21/768

Abstract: A method for manufacturing a semiconductor device is provided. The method includes a step of performing a chemical mechanical polishing process on a first silicon oxide layer to form a planar surface layer; surface treatment is performed on the planar surface layer to form a treated planarization layer, and a second silicon oxide layer is formed on the treated planarization layer.