公开(公告)号：US12027577B2

公开(公告)日：2024-07-02

申请号：US17351267

申请日：2021-06-18

Applicant: University of Electronic Science and Technology of China

Inventor： Ming Qiao ,  Shuhao Zhang ,  Zhangyi'an Yuan ,  Dican Hou ,  Bo Zhang

IPC: H01L29/06 ,  H01L29/08 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/063 ,  H01L29/0878 ,  H01L29/66681 ,  H01L29/7816

Abstract: A lateral power semiconductor device includes a first type doping substrate at a bottom of the lateral power semiconductor device, a second type doping drift region, a second type heavy doping drain, a first type doping body; a first type heavy doping body contact and a second type heavy doping source, where dielectric layers are on a right side of the second type heavy doping source; the dielectric layers are arranged at intervals in a longitudinal direction in the first type doping body, and between adjacent dielectric layers in the longitudinal direction is the first type doping body; and a polysilicon is surrounded by the dielectric layer at least on a right side. Compared with conventional trench devices, the lateral power semiconductor device introduces a lateral channel, to increase a current density, thereby realizing a smaller channel on-resistance.