公开(公告)号：US08900998B2

公开(公告)日：2014-12-02

申请号：US14084189

申请日：2013-11-19

Applicant: University of Windsor

Inventor： Mordechay Schlesinger ,  Robert Andrew Petro

IPC: H01L21/44 ,  H01L21/285

CPC classification number: H01L21/28506 ,  C23C18/1608 ,  C23C18/1642 ,  C23C18/1658 ,  C23C18/166 ,  C23C18/44 ,  C23C18/48 ,  C23C18/54 ,  H01L21/02491 ,  H01L21/02521

Abstract: A plating bath for electroless deposition of gold and gold alloy layers on such silicon-based substrates, includes Na(AuCl4) and/or other gold (III) chloride salts as a gold ion source. The bath is formed as a binary bath solution formed from mixing first and second bath components. The first bath component includes gold salts in concentrations up to 40 g/L, boric acid, in amounts of up to 30 g/L, and a metal hydroxide in amounts up to 20 g/L. The second bath component includes an acid salt, in amounts up to 25 g/L, sodium thiosulfate in amounts up to 30 g/L, and suitable acid, such as boric acid in amounts up to 20 g/L.

Abstract translation: 用于在这种硅基底材上无电沉积金和金合金层的电镀浴包括作为金离子源的Na（AuCl 4）和/或其它金（III）氯化金盐。 该浴形成为通过混合第一和第二浴组分形成的二元浴溶液。 第一浴组分包括浓度高达40g / L的金盐，最高达30g / L的硼酸，和最高达20g / L的金属氢氧化物。 第二浴组分包括高达25g / L的酸盐，最高达30g / L的硫代硫酸钠，和最多达20g / L的合适的酸，如硼酸。