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1.
公开(公告)号:US11696417B2
公开(公告)日:2023-07-04
申请号:US17859449
申请日:2022-07-07
Applicant: WOLFSPEED, INC.
Inventor: Matthew Feurtado , Brice McPherson , Daniel Martin , Alexander Lostetter
IPC: H05K7/14 , H02M1/088 , H02M7/00 , H02M7/537 , H05K1/02 , H05K1/18 , H05K7/20 , H05K5/00 , H05K5/02 , H02M1/00
CPC classification number: H05K7/1432 , H02M1/088 , H02M7/003 , H02M7/537 , H05K1/0271 , H05K1/181 , H05K5/0069 , H05K5/0247 , H05K7/20509 , H05K7/20909 , H02M1/0054 , H05K2201/064 , H05K2201/10151 , H05K2201/10272
Abstract: A power module including at least one substrate, a housing arranged on the at least one power substrate, a first terminal electrically connected to the at least one power substrate, a second terminal including a contact surface, a third terminal electrically connected to the at least one power substrate, a plurality of power devices arranged on and connected to the at least one power substrate, and the third terminal being electrically connected to at least one of the plurality of power devices. The power module further including a base plate and a plurality of pin fins arranged on the base plate and the plurality of pin fins configured to provide direct cooling for the power module.
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公开(公告)号:USD954668S1
公开(公告)日:2022-06-14
申请号:US29676416
申请日:2019-01-10
Applicant: WOLFSPEED, INC.
Designer: Matthew Feurtado , Daniel Martin , Ty McNutt , Brice McPherson , Alexander Lostetter
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公开(公告)号:US20240105651A1
公开(公告)日:2024-03-28
申请号:US18530496
申请日:2023-12-06
Applicant: Wolfspeed, Inc.
Inventor: Brice McPherson , Daniel Martin , Jennifer Stabach
CPC classification number: H01L24/09 , H01L24/49 , H01L25/072 , H01L23/49562 , H01L2224/04042 , H01L2924/13055 , H01L2924/13091 , H01L2924/30101
Abstract: A package for power electronics includes a power substrate, a number of power semiconductor die, and a Kelvin connection contact. Each one of the power semiconductor die are on the power substrate and include a first power switching pad, a second power switching pad, a control pad, a semiconductor structure, and a Kelvin connection pad. The semiconductor structure is between the first power switching pad, the second power switching pad, and the control pad, and is configured such that a resistance of a power switching path between the first power switching pad and the second power switching pad is based on a control signal provided at the control pad. The Kelvin connection pad is coupled to the power switching path. The Kelvin connection contact is coupled to the Kelvin connection pad of each one of the power semiconductor die via a Kelvin conductive trace on the power substrate.
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公开(公告)号:US11756910B2
公开(公告)日:2023-09-12
申请号:US17557322
申请日:2021-12-21
Applicant: Wolfspeed, Inc.
Inventor: Brice McPherson , Daniel Martin , Jennifer Stabach
IPC: H01L23/00 , H01L25/07 , H01L23/495 , H01L21/66
CPC classification number: H01L24/09 , H01L24/49 , H01L25/072 , H01L22/14 , H01L22/30 , H01L22/32 , H01L23/49541 , H01L23/49548 , H01L23/49558 , H01L23/49562 , H01L23/49575 , H01L2224/04042 , H01L2924/13055 , H01L2924/13091 , H01L2924/30101
Abstract: A package for power electronics includes a power substrate, a number of power semiconductor die, and a Kelvin connection contact. Each one of the power semiconductor die are on the power substrate and include a first power switching pad, a second power switching pad, a control pad, a semiconductor structure, and a Kelvin connection pad. The semiconductor structure is between the first power switching pad, the second power switching pad, and the control pad, and is configured such that a resistance of a power switching path between the first power switching pad and the second power switching pad is based on a control signal provided at the control pad. The Kelvin connection pad is coupled to the power switching path. The Kelvin connection contact is coupled to the Kelvin connection pad of each one of the power semiconductor die via a Kelvin conductive trace on the power substrate.
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5.
公开(公告)号:US11445630B2
公开(公告)日:2022-09-13
申请号:US17149815
申请日:2021-01-15
Applicant: WOLFSPEED, INC.
Inventor: Matthew Feurtado , Brice McPherson , Daniel Martin , Alexander Lostetter
IPC: H05K7/00 , H05K7/14 , H02M1/088 , H02M7/00 , H02M7/537 , H05K1/02 , H05K1/18 , H05K7/20 , H05K5/00 , H05K5/02 , H02M1/00
Abstract: A power module including at least one substrate, a housing arranged on the at least one power substrate, a first terminal electrically connected to the at least one power substrate, a second terminal including a contact surface, a third terminal electrically connected to the at least one power substrate, a plurality of power devices arranged on and connected to the at least one power substrate, and the third terminal being electrically connected to at least one of the plurality of power devices. The power module further including a base plate and a plurality of pin fins arranged on the base plate and the plurality of pin fins configured to provide direct cooling for the power module.
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6.
公开(公告)号:US20240292575A1
公开(公告)日:2024-08-29
申请号:US18655878
申请日:2024-05-06
Applicant: Wolfspeed, Inc.
Inventor: Daniel Martin , Brice McPherson , Alexander Lostetter
CPC classification number: H05K7/20909 , H01L25/165 , H05K1/0271 , H05K1/181 , H05K7/20509 , G01R31/40 , H02M1/0054
Abstract: The disclosure is directed to a power module that includes at least one power substrate, a housing arranged on the at least one power substrate, and a first terminal electrically connected to the at least one power substrate. The first terminal includes a contact surface located above the housing at a first elevation. The power module includes a second terminal including a contact surface located above the housing at a second elevation different from the first elevation, a third terminal electrically connected to the at least one power substrate, and a plurality of power devices electrically connected to the at least one power substrate.
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公开(公告)号:US11887953B2
公开(公告)日:2024-01-30
申请号:US17352965
申请日:2021-06-21
Applicant: Wolfspeed, Inc.
Inventor: Brice McPherson , Daniel Martin , Jennifer Stabach
IPC: H01L23/00 , H01L25/07 , H01L23/495 , H01L21/66
CPC classification number: H01L24/09 , H01L24/49 , H01L25/072 , H01L22/14 , H01L22/30 , H01L22/32 , H01L23/49541 , H01L23/49548 , H01L23/49558 , H01L23/49562 , H01L23/49575 , H01L2224/04042 , H01L2924/13055 , H01L2924/13091 , H01L2924/30101
Abstract: A package for power electronics includes a power substrate, a number of power semiconductor die, and a Kelvin connection contact. Each one of the power semiconductor die are on the power substrate and include a first power switching pad, a second power switching pad, a control pad, a semiconductor structure, and a Kelvin connection pad. The semiconductor structure is between the first power switching pad, the second power switching pad, and the control pad, and is configured such that a resistance of a power switching path between the first power switching pad and the second power switching pad is based on a control signal provided at the control pad. The Kelvin connection pad is coupled to the power switching path. The Kelvin connection contact is coupled to the Kelvin connection pad of each one of the power semiconductor die via a Kelvin conductive trace on the power substrate.
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公开(公告)号:US20220115346A1
公开(公告)日:2022-04-14
申请号:US17557322
申请日:2021-12-21
Applicant: Wolfspeed, Inc.
Inventor: Brice McPherson , Daniel Martin , Jennifer Stabach
Abstract: A package for power electronics includes a power substrate, a number of power semiconductor die, and a Kelvin connection contact. Each one of the power semiconductor die are on the power substrate and include a first power switching pad, a second power switching pad, a control pad, a semiconductor structure, and a Kelvin connection pad. The semiconductor structure is between the first power switching pad, the second power switching pad, and the control pad, and is configured such that a resistance of a power switching path between the first power switching pad and the second power switching pad is based on a control signal provided at the control pad. The Kelvin connection pad is coupled to the power switching path. The Kelvin connection contact is coupled to the Kelvin connection pad of each one of the power semiconductor die via a Kelvin conductive trace on the power substrate.
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