公开(公告)号：US10217897B1

公开(公告)日：2019-02-26

申请号：US15726941

申请日：2017-10-06

Applicant: Wisconsin Alumni Research Foundation

Inventor： Zhenqiang Ma ,  Kwangeun Kim

IPC: H01L33/06 ,  H01L33/32 ,  H01L33/44 ,  H01L33/00 ,  H01L33/14

Abstract: Light-emitting devices having a multiple quantum well (MQW) diode structure and methods of making and using the devices are provided. The devices include aluminum nitride/aluminum oxide bilayers on their hole injection layers. The bilayers improve the energy efficiency of the devices, with respect to devices that lack the bilayers or that include only a layer of aluminum oxide on their hole injection layers.