公开(公告)号：US20250054544A1

公开(公告)日：2025-02-13

申请号：US18927830

申请日：2024-10-25

Applicant: Xiamen Industrial Technology Research Institute Co., Ltd.

Inventor： Anqiao CHEN ,  Taiwei CHIU ,  SZU-CHUN KANG ,  Hongyao WU ,  Wuxin LI ,  Enping CHENG ,  Xiaoli SU ,  Yongde ZHANG

IPC: G11C13/00

Abstract: The disclosure discloses a data writing operation method and device of a resistive random access memory, and the method includes: applying a first pulse voltage to the resistive random access memory, and adding one to a corresponding number to obtain a first number; if the current first number is greater than a first set upper limit value and a current second number is smaller than or equal to a second set upper limit value, obtaining a test value; if the test value does not satisfy a preset condition, applying a second pulse voltage to the resistive random access memory, and adding one to the corresponding number to obtain a second number until the test value satisfies the preset condition or the current second number is greater than the second set upper limit value, thereby improving the writing efficiency.

公开(公告)号：US20250159902A1

公开(公告)日：2025-05-15

申请号：US18928224

申请日：2024-10-28

Applicant: XIAMEN INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE CO., LTD.

Inventor： Enping CHENG ,  Taiwei CHIU ,  Tingying SHEN ,  Wuxin LI ,  SZU-CHUN KANG ,  Anqiao CHEN ,  Xiaoli SU

IPC: H10B63/00 ,  H10N70/00

Abstract: A semiconductor structure and a preparation method thereof are provided. The semiconductor structure includes: a substrate; and a plurality of resistive devices disposed on the substrate; each of the resistive devices includes a lower electrode, a resistive layer and an upper electrode, the resistive layer covers a side wall and at least part of an upper surface of the lower electrode to isolate the lower electrode from the upper electrode, the upper electrode includes a first upper sub-electrode, a second upper sub-electrode and a third upper sub-electrode, the first upper sub-electrode and the second upper sub-electrode are disposed on two sides of the lower electrode respectively, and the third upper sub-electrode is disposed on the lower electrode.

公开(公告)号：US20250149088A1

公开(公告)日：2025-05-08

申请号：US19012984

申请日：2025-01-08

Applicant: XIAMEN INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE CO., LTD.

Inventor： Anqiao CHEN ,  Tingying SHEN ,  Taiwei CHIU ,  SZU-CHUN KANG ,  Wuxin LI ,  Jinmao YAN ,  Enping CHENG

IPC: G11C13/00

Abstract: A method and apparatus for initializing an RRAM and an electronic device are provided. The method includes: inputting a plurality of pulses of a first voltage into an RRAM until memory cells in the RRAM transition from a high resistance state to a low resistance state; inputting a plurality of pulses of a second voltage, a third voltage . . . and an Nth voltage into the RRAM, so that resistance values of the memory cells reach a corresponding preset value, respectively. Voltage values of the first voltage to the Nth voltage gradually decrease. When a total number of input pulses of an ith voltage is greater than a second preset threshold and a resistance change rate is less than a rate threshold, a plurality of pulses of an increased ith voltage are input into the RRAM until the resistance values of the memory cells reach an ith preset value.