公开(公告)号：US10381583B2

公开(公告)日：2019-08-13

申请号：US14098330

申请日：2013-12-05

Applicant: Xerox Corporation

Inventor： Yiliang Wu ,  Chad Smithson ,  Shiping Zhu

IPC: H01L29/08 ,  H01L51/05 ,  H01L51/42 ,  G11C13/04 ,  G11C13/00 ,  H01L51/00 ,  H01L27/28

Abstract: An electronic device includes a substrate, a gate electrode, a dielectric layer, a source electrode, a drain electrode, and a semiconducting layer formed from an organic semiconductor compound and a photo-responsive polymer. The resistance can be switched to a “low” state by irradiation, and can be switched to a “high” state by applying a gate bias voltage. This can be useful for a memory device.

公开(公告)号：US20150162555A1

公开(公告)日：2015-06-11

申请号：US14098330

申请日：2013-12-05

Applicant: Xerox Corporation

Inventor： Yiliang Wu ,  Chad Smithson ,  Shiping Zhu

IPC: H01L51/05 ,  G11C13/04 ,  H01L51/42

CPC classification number: H01L51/0508 ,  G11C13/0014 ,  G11C13/0016 ,  G11C13/04 ,  G11C13/047 ,  G11C2213/53 ,  H01L27/283 ,  H01L51/004 ,  H01L51/0074 ,  H01L51/0566 ,  H01L51/428 ,  Y02E10/549

Abstract: An electronic device includes a substrate, a gate electrode, a dielectric layer, a source electrode, a drain electrode, and a semiconducting layer formed from an organic semiconductor compound and a photo-responsive polymer. The resistance can be switched to a “low” state by irradiation, and can be switched to a “high” state by applying a gate bias voltage. This can be useful for a memory device.

Abstract translation: 电子器件包括由有机半导体化合物和光敏聚合物形成的衬底，栅电极，电介质层，源电极，漏电极和半导体层。 电阻可以通过照射切换到“低”状态，并且可以通过施加栅极偏置电压而切换到“高”状态。 这对于存储器件可能是有用的。