公开(公告)号：US09117922B2

公开(公告)日：2015-08-25

申请号：US14145688

申请日：2013-12-31

Applicant: Ye Xin Technology Consulting Co., Ltd.

Inventor： Anjo Kenji

IPC: H01L21/04 ,  H01L21/8234 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L29/78696 ,  H01L29/66969 ,  H01L29/78693

Abstract: A thin film transistor includes a gate electrode, a channel layer, a source electrode, and a drain electrode. The channel layer is made of an amorphous oxide semiconductor. The channel layer includes one high oxygen ion concentration region, or two high oxygen ion concentration regions one above the other. An oxygen ion density of each high oxygen ion concentration region is in a range of from about 1×1018 to about 1×1021 per cubic centimeter. A thin film transistor substrate and a method of manufacturing the thin film transistor substrate are also provided.

Abstract translation: 薄膜晶体管包括栅电极，沟道层，源电极和漏电极。 沟道层由无定形氧化物半导体制成。 沟道层包括一个高氧离子浓度区域或两个高氧离子浓度区域。 每个高氧离子浓度区域的氧离子密度在约1×1018至约1×1021每立方厘米的范围内。 还提供薄膜晶体管基板和制造薄膜晶体管基板的方法。