公开(公告)号：US20240321932A1

公开(公告)日：2024-09-26

申请号：US18575774

申请日：2022-06-13

Applicant: ams-OSRAM AG

Inventor： Rainer Minixhofer ,  Jörg Siegert ,  Angus Chan ,  Franz Schrank

IPC: H01L27/146

CPC classification number: H01L27/14689 ,  H01L27/14621 ,  H01L27/14636 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14698

Abstract: In an embodiment a method for fabricating a photodetector device includes providing a carrier substrate, wherein a device layer is arranged at a main surface of the carrier substrate, and an insulating layer is arranged between the device layer and the carrier substrate, forming a plurality of photodetector elements in the device layer, forming an intermetal dielectric on the device layer, wherein contact pads electrically connected to the photodetector elements are embedded in the intermetal dielectric, forming pad openings in the intermetal dielectric, the pad openings reaching the contact pads so that the contact pads are accessible via the pad openings, mounting a handling substrate on the intermetal dielectric, removing the carrier substrate, singulating the plurality of photodetector elements such that a plurality of separate photodetector chips comprising one photodetector element are formed and releasing the photodetector chips from the handling substrate.