公开(公告)号：US20240030360A1

公开(公告)日：2024-01-25

申请号：US18256455

申请日：2021-11-29

Applicant: ams-Osram AG

Inventor： Gerald Meinhardt ,  Frederic Roger ,  Ingrid Jonak-Auer ,  Eugene G. Dierschke

IPC: H01L31/0216 ,  H01L27/146 ,  H01L31/102

CPC classification number: H01L31/02161 ,  H01L27/14645 ,  H01L31/102 ,  H01L27/1463

Abstract: A photodiode device includes a semiconductor substrate with a main surface, the semiconductor substrate being of a first type of electric conductivity. At least one doped well of a second type of electric conductivity is arranged at the main surface of the substrate, the second type of electric conductivity being opposite to the first type of electric conductivity. The at least one doped well and the substrate are electrically contactable. A cover layer is arranged on the main surface of the substrate. The cover layer is at least one of an epi-layer of the first type of electric conductivity and a dielectric surface passivation layer comprising a plurality of space charges, or a combination thereof.

公开(公告)号：US20240105740A1

公开(公告)日：2024-03-28

申请号：US18256286

申请日：2021-12-08

Applicant: AMS-OSRAM AG

Inventor： Frederic Roger ,  Gerald Meinhardt ,  Ingrid Jonak-Auer ,  Eugene G. Dierschke

IPC: H01L27/146

CPC classification number: H01L27/14607 ,  H01L27/1462 ,  H01L27/14636 ,  H01L27/14643

Abstract: A photodiode device includes a semiconductor substrate with a main surface, the semiconductor substrate being of a first type of electric conductivity. The main surface includes at least one incidence area for electromagnetic radiation. A plurality of doped wells of a second type of electric conductivity are arranged at the main surface of the substrate, the second type of electric conductivity being opposite to the first type of electric conductivity. The doped wells and the substrate are electrically contactable. The doped wells are arranged along a perimeter of the at least one incidence area, such that a center region of the incidence area is free from the doped wells.