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    Semiconductor device
    1.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US12176367B2

    公开(公告)日：2024-12-24

    申请号：US17032957

    申请日：2020-09-25

    Applicant: VisEra Technologies Company Limited

    Inventor： Wei-Ko Wang ,  Pei-Yi Hsiao

    IPC: H01L27/146

    Abstract: A semiconductor device is provided. The semiconductor device includes a substrate having a plurality of first photoelectric conversion elements and a plurality of second photoelectric conversion elements. The semiconductor device also includes a light-adjusting structure disposed on the substrate. The light-adjusting structure includes a patterned multi-film having a plurality of trenches that correspond to the first photoelectric conversion elements. The first photoelectric conversion elements are used for sensing near infrared light, and the second photoelectric conversion elements are used for sensing visible light.

    IMAGE SENSOR AND METHOD FOR FORMING THE SAME
    2.
    发明公开
    IMAGE SENSOR AND METHOD FOR FORMING THE SAME 审中-公开

    公开(公告)号：US20240297193A1

    公开(公告)日：2024-09-05

    申请号：US18176854

    申请日：2023-03-01

    Applicant: VisEra Technologies Company Limited

    Inventor： Wei-Lung TSAI ,  Ching-Chiang WU

    IPC: H01L27/146

    CPC classification number: H01L27/1463 ,  H01L27/14621 ,  H01L27/14629 ,  H01L27/14636 ,  H01L27/14685

    Abstract: An image sensor is provided. The image sensor includes a substrate and an isolation structure disposed over the substrate. The isolation structure has isolation segments in a cross-sectional view and is electrically non-conductive, and the isolation segments form concave tanks that define pixel regions. The image sensor also includes bottom electrodes disposed at bottoms of the concave tanks and reflective layers disposed on sidewalls of the concave tanks. The image sensor further includes a photoelectric conversion layer disposed on the isolation structure and in the concave tanks and a top electrode disposed on the photoelectric conversion layer. Moreover, the image sensor includes an encapsulation layer disposed on the top electrode.

    Image sensor
    3.
    发明授权
    Image sensor 有权

    公开(公告)号：US12027548B2

    公开(公告)日：2024-07-02

    申请号：US17116700

    申请日：2020-12-09

    Applicant: VisEra Technologies Company Limited

    Inventor： Cheng-Hsuan Lin ,  Yu-Chi Chang

    IPC: H01L27/146 ,  G02B7/36

    CPC classification number: H01L27/14623 ,  G02B7/36 ,  H01L27/14643

    Abstract: An image sensor includes: a group of autofocus sensor units; neighboring sensor units adjacent to and surrounding the group of autofocus sensor units, wherein each of the neighboring sensor units has a first side close to the group of autofocus sensor units, and a second side away from the group of autofocus sensor units. The image sensor further includes: a first light shielding structure disposed between the group of autofocus sensor units and the neighboring sensor units; a first extra light shielding structure laterally extending from the first light shielding structure and disposed on at least one of the first side and the second side of one or more of the neighboring sensor units.

    Optical devices
    7.
    发明授权
    Optical devices 有权

    公开(公告)号：US11796723B2

    公开(公告)日：2023-10-24

    申请号：US17199987

    申请日：2021-03-12

    Applicant: VisEra Technologies Company Limited

    Inventor： Zong-Ru Tu

    IPC: G02B5/20 ,  G02B5/18

    CPC classification number: G02B5/208 ,  G02B5/1809 ,  G02B5/1819

    Abstract: An optical device is provided. The optical device includes a plurality of IR-cut pixels, a plurality of IR-pass pixels, and a plurality of grids. The grids surround the IR-cut pixels and the IR-pass pixels. Each IR-cut pixel includes a first grating structure. A method for fabricating the optical device is also provided.

    SOLID-STATE IMAGE SENSOR
    9.
    发明申请
    SOLID-STATE IMAGE SENSOR 有权

    公开(公告)号：US20230110102A1

    公开(公告)日：2023-04-13

    申请号：US17496472

    申请日：2021-10-07

    Applicant: VisEra Technologies Company Limited

    Inventor： Ching-Hua LI ,  Cheng-Hsuan LIN ,  Zong-Ru TU ,  Yu-Chi CHANG ,  Han-Lin WU

    IPC: H01L27/146 ,  H04N5/369

    Abstract: A solid-state image sensor is provided. The solid-state image sensor includes photoelectric conversion elements and a color filter layer disposed above the photoelectric conversion elements. The photoelectric conversion elements and the color filter layer form normal pixels and auto-focus pixels, the color filter layer that correspond to the normal pixels are divided into first color filter segments and second color filter segments, the first color filter segments are disposed on at least one side that is closer to an incident light, and the width of the first color filter segments is greater than the width of the second color filter segments.

    Solid-state imaging device having a waveguide partition grid with variable grid widths
    10.
    发明授权
    Solid-state imaging device having a waveguide partition grid with variable grid widths 有权

    公开(公告)号：US11569285B2

    公开(公告)日：2023-01-31

    申请号：US16872605

    申请日：2020-05-12

    Applicant: VisEra Technologies Company Limited

    Inventor： Chi-Han Lin

    IPC: H01L27/146 ,  G02B5/20 ,  G02B7/28 ,  G02B1/11

    Abstract: A solid-state imaging device having a first area and a second area surrounding the first area is provided. The solid-state imaging device includes a substrate having a plurality of photoelectric conversion elements. The solid-state imaging device also includes a color filter layer disposed on the substrate. The color filter layer includes a plurality of color filter segments corresponding to the plurality of photoelectric conversion elements. The solid-state imaging device further includes an optical waveguide layer over the color filter layer. The optical waveguide layer includes a waveguide partition grid, a waveguide material in spaces of the waveguide partition grid, and an anti-reflection film on the waveguide partition grid and the waveguide material. The width of the top of the waveguide partition grid is larger than the width of the bottom of the waveguide partition grid.

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