公开(公告)号：US20040043310A1

公开(公告)日：2004-03-04

申请号：US10436972

申请日：2003-05-14

Inventor： Tomoyuki Takeishi ,  Kenji Kawano ,  Hiroshi Ikegami ,  Shinichi Ito ,  Riichiro Takahashi

IPC: G03F009/00 ,  G21K001/08 ,  H01J003/14 ,  H01J003/26 ,  H01J049/42 ,  H01L021/76 ,  G21K005/10 ,  H01J037/08 ,  G21G005/00 ,  G03B027/32 ,  G03B027/52 ,  G03B027/68 ,  G03B027/54 ,  G03B027/58 ,  G02B026/02 ,  G03F007/207 ,  G03F007/26 ,  G03F007/30 ,  G03F007/40

CPC classification number: H01L23/544 ,  B23K26/066 ,  B23K26/364 ,  B23K26/40 ,  B23K2103/172 ,  G03F7/2026 ,  G03F7/70341 ,  G03F9/7076 ,  G03F9/708 ,  G03F9/7084 ,  G21K5/10 ,  H01J2237/30438 ,  H01L2223/54453 ,  H01L2924/0002 ,  Y10S438/949 ,  H01L2924/00

Abstract: A processing method for selectively reducing or removing the region to be exposed with energy ray in a film formed on a substrate, comprising relatively scanning a first exposure light whose shape on the substrate is smaller than the whole first region to be exposed against the whole first region to be exposed to selectively remove or reduce the first region to be exposed, and exposing a whole second region to be exposed inside the whole first region to be exposed with a second exposure light to selectively expose the whole second region to be exposed.

Abstract translation: 一种处理方法，用于在形成在基板上的膜中选择性地减少或去除待曝光的区域，该方法包括相对地扫描基板上的形状比整个第一区域要暴露的整个第一区域的第一曝光灯 区域，以选择性地去除或减少要暴露的第一区域，并且用第二曝光光将待暴露的整个第一区域暴露在整个第一区域内的整个第二区域，以选择性地暴露待暴露的整个第二区域。

公开(公告)号：US20040029046A1

公开(公告)日：2004-02-12

申请号：US10394208

申请日：2003-03-24

Inventor： Osamu Nagano ,  Susumu Hashimoto ,  Yuichiro Yamazaki ,  Atsushi Ando

IPC: G03F007/20 ,  G21K001/08 ,  H01J003/14 ,  H01J003/26 ,  H01J049/42 ,  G21K005/10 ,  H01J037/08 ,  G21G005/00

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3174

Abstract: A charged particle beam lithography system includes a charged particle beam emitter which generates a charged particle beam and which emits the charged particle beam to a wafer, the charged particle beam emitter emitting the charged particle beam at an acceleration voltage lower than a voltage causing a proximity effect that back scattered electrons generated from the wafer by irradiation of the charged particle beam influence an exposure amount of a pattern to be written close to an irradiation position of the charged particle beam; an illumination optical system which adjusts a beam radius of the charged particle beam; a cell aperture having a cell pattern of a shape corresponding to a desired pattern to be written; a first deflector which deflects the charged particle beam with a first electric field so as to enter a desired cell pattern of the cell aperture, and which deflects the charged particle beam which passes through the cell pattern back to an optical axis thereof; a demagnification projection optical system which demagnifies the charged particle beam from the cell aperture with a second electric field so as to form an image on the wafer; and a second deflector which deflects the charged particle beam from the cell aperture with a third electric field to adjust an irradiation position of the charged particle beam on the wafer, wherein the charged particle beam emitter emits the charged particle beam at an acceleration voltage lower than a voltage causing a proximity effect that back scattered electrons generated from the wafer by irradiation of the charged particle beam influence an exposure amount of a pattern to be written close to an irradiation position of the charged particle beam, and the demagnification projection optical system includes N-fold (N: a natural number of 2 or larger) of M-pole lenses (M: an even number of 4 or larger) and an aberration corrector which corrects at least one of spherical aberration and chromatic aberration in nullM/2null directions each orthogonal to the optical axis independently of each other, the aberration occurring when the beam radius is increased by the irradiation optical system in order to reduce a blur caused by a space-charge effect in a position where the charged particle beam forms an image on the wafer.

公开(公告)号：US20040000651A1

公开(公告)日：2004-01-01

申请号：US10386262

申请日：2003-03-11

Inventor： Thomas N. Horsky ,  Tommy D. Hollingsworth

IPC: H01J037/08

CPC classification number: H01J27/12

Abstract: An ion source (10) for an ion implanter is provided, comprising: (i) an ionization chamber (14) defined at least partially by chamber walls (12), and having an inlet (45) into which a sputtering gas may be injected and an aperture (18) through which an ion beam (B) may be extracted; (ii) an ionizing electron source (44) for ionizing the sputtering gas to form a sputtering plasma; and (iii) a sputterable repeller (100). The sputterable repeller both (a) repels electrons emitted by the electron source, and (b) provides a source of sputtered material that can be ionized by the electron source. The sputterable repeller (100) comprises a slug (108) of sputterable material, and further comprises mounting structure (102, 104) for removably mounting the slug within the ionization chamber (14), so that the slug is made removably detachable from the mounting structure. The sputterable material may be any of the following elements, or compounds including any of these elements: aluminum (Al), boron (B), beryllium (Be), carbon (C), cesium (Cs), germanium, (Ge), molybdenum, (Mo), antimony (Sb), or silicon (Si). The repeller (100) is negatively biased with respect to the ionization chamber walls (12), and may be continuously variably biased to provide for a wide dynamic range of resulting ion beam currents.

Abstract translation: 提供了一种用于离子注入机的离子源（10），包括：（i）至少部分地由室壁（12）限定的电离室（14），并且具有可以注入溅射气体的入口（45） 以及可以提取离子束（B）的孔径（18）; （ii）用于电离溅射气体以形成溅射等离子体的电离电子源（44）; 和（iii）可溅射驱散器（100）。 可溅射的斥极者（a）排斥由电子源发射的电子，和（b）提供可以被电子源电离的溅射材料源。 可溅射斥斥器（100）包括可溅射材料的块状物（108），并且还包括用于将电极可拆卸地安装在电离室（14）内的安装结构（102,104），使得电池块可拆卸地从安装 结构体。 可溅射材料可以是以下元素中的任一种，或者包括这些元素中的任一种的化合物：铝（Al），硼（B），铍（Be），碳（C），铯（Cs），锗，（Ge） 钼，（Mo），锑（Sb）或硅（Si）。 驱散器（100）相对于电离室壁（12）被负偏置，并且可以被连续地可变地偏置以提供所得离子束电流的宽动态范围。

公开(公告)号：US20030020025A1

公开(公告)日：2003-01-30

申请号：US09915618

申请日：2001-07-26

Applicant: YOSHIKAZU NAKAYAMA and DAIKEN CHEMICAL CO., LTD.

Inventor： Yoshikazu Nakayama ,  Akio Harada

IPC: G21G005/00 ,  G21K005/10 ,  G03F007/20 ,  H01J037/08

CPC classification number: G03F7/2049 ,  G03F7/075 ,  H01J2237/31759 ,  Y10S977/856 ,  Y10S977/876

Abstract: A lithographic method using an ultra-fine probe needle in which a base end of a nanotube is fastened to a holder with the tip end of the nanotube protruded from the holder. The tip end of the thus obtained nanotube probe needle is brought to contact a sample surface, a voltage is applied across the probe needle and sample, and the probe needle is moved while the sample substance in the area of contact of the probe needle is removed by the application of the voltage, thus forming a groove-form pattern on the sample surface.

Abstract translation: 使用超细探针的平版印刷法，其中纳米管的基端被固定到具有从保持器突出的纳米管的尖端的保持器。 使由此获得的纳米管探针的尖端与样品表面接触，跨越探针和样品施加电压，并且移除探针，同时移除探针的接触区域中的样品物质 通过施加电压，从而在样品表面上形成凹槽形式的图案。

公开(公告)号：US20020171050A1

公开(公告)日：2002-11-21

申请号：US10140710

申请日：2002-05-08

Inventor： Yoshihiro Koyama

IPC: H01J037/08

CPC classification number: H01J37/3056 ,  H01J37/3002 ,  H01J2237/31713

Abstract: In a gas injector according to the invention, a forward section of the same is formed by a cylindrical portion which collectively contains and holds a plurality of nozzles and gas supply pipes and a nozzle guide portion which has an opening of a size to allow only one of the nozzles to protrude outwardly at an end thereof and which is formed like a taper extending from said cylindrical portion to said opening, and a rear section of the gas injector has a mechanism capable of selectively driving said plurality of nozzles for elevation through said gas supply pipes.

Abstract translation: 在根据本发明的气体注射器中，其前部由圆筒部形成，该圆筒部共同地容纳并保持多个喷嘴和气体供给管以及喷嘴引导部，该喷嘴引导部的开口尺寸仅允许一个 的喷嘴在其端部向外突出并且形成为从所述圆柱形部分延伸到所述开口的锥形，并且气体喷射器的后部具有能够选择性地驱动所述多个喷嘴以通过所述气体升高的机构 供应管道。

公开(公告)号：US20020166979A1

公开(公告)日：2002-11-14

申请号：US10140074

申请日：2002-05-08

Inventor： Gyeong-Su Keum ,  Hyung-Sik Hong ,  Yun-Sik Yang ,  Gum-Chan An ,  Hae-Keun Youn ,  Byoung-Sik Jung ,  Ki-Cheol Choi

IPC: H01J037/08

CPC classification number: H01L21/68 ,  H01J2237/20292 ,  H01J2237/31701

Abstract: An apparatus for use in orienting an object at a reference angle includes a pin gauge having at least two projections located at an end of the body of the apparatus. The projections are located at certain X Y coordinates of an X, Y Z Cartesian coordinate system. A horizontal support supports the body so as to be movable horizontally in the longitudinal direction of the projections. A mechanical drive member is operable to move the body mechanically in the horizontal direction. The apparatus may also include a vertical support and vertical drive member. The pin gauge is mechanically moved into contact with a surface of an object to provide a reference angle for the object. Then the object is pivoted, if necessary, to bring the surface into point contact with all of the projections of the pin gauge, whereupon the object is oriented at the reference angle. Process errors in aligning the object using the reference angle are reduced because the orienting of the object at the reference angle is accomplished using mechanical elements.

Abstract translation: 用于以参考角度定向物体的装置包括具有至少两个突出部的销规，所述突出部位于装置主体的端部。 投影位于X，Y Z笛卡尔坐标系的某个X Y坐标。 水平支撑件支撑主体，以便能够在突起的纵向方向上水平移动。 机械驱动构件可操作以在水平方向上机械地移动机体。 该装置还可以包括垂直支撑和垂直驱动构件。 针规被机械地移动与物体的表面接触以提供对象的参考角度。 然后，如果需要，物体被枢转以使表面与针规的所有突起点接触，于是物体以参考角度定向。 使用参考角对准对象的处理误差减小，因为使用机械元件来实现对象在参考角度的定向。

公开(公告)号：US20020162973A1

公开(公告)日：2002-11-07

申请号：US10108101

申请日：2002-03-27

Inventor： James J. Cordingley ,  Roger D. Dowd ,  Jonathan S. Ehrmann ,  Joseph J. Griffiths ,  Joohan Lee ,  Donald V. Smart ,  Donald J. Svetkoff

IPC: A61N005/00 ,  G21G005/00 ,  G21K005/10 ,  H01J037/08 ,  H01L021/26

CPC classification number: B23K26/0736 ,  B23K26/032 ,  B23K26/04 ,  B23K26/043 ,  B23K26/0613 ,  B23K26/0622 ,  B23K26/0624 ,  B23K26/064 ,  B23K26/0643 ,  B23K26/0648 ,  B23K26/0652 ,  B23K26/0665 ,  B23K26/067 ,  B23K26/082 ,  B23K26/10 ,  B23K26/16 ,  B23K26/361 ,  B23K26/389 ,  B23K26/40 ,  B23K2101/38 ,  B23K2101/40 ,  B23K2103/10 ,  B23K2103/12 ,  B23K2103/172 ,  B23K2103/50 ,  H01L21/485 ,  H01L21/76888 ,  H01L21/76894 ,  H01L22/12 ,  H01L23/5258 ,  H01L2924/0002 ,  H05K3/0026 ,  H01L2924/00

Abstract: A method and system for locally processing a predetermined microstructure formed on a substrate without causing undesirable changes in electrical or physical characteristics of the substrate or other structures formed on the substrate are provided. The method includes providing information based on a model of laser pulse interactions with the predetermined microstructure, the substrate and the other structures. At least one characteristic of at least one pulse is determined based on the information. A pulsed laser beam is generated including the at least one pulse. The method further includes irradiating the at least one pulse having the at least one determined characteristic into a spot on the predetermined microstructure. The at least one determined characteristic and other characteristics of the at least one pulse are sufficient to locally process the predetermined microstructure without causing the undesirable changes.

Abstract translation: 提供一种用于局部处理形成在基板上的预定微结构而不引起基板或其上形成在基板上的其它结构的电学或物理特性的不期望的变化的方法和系统。 该方法包括基于与预定微结构，衬底和其它结构的激光脉冲相互作用的模型来提供信息。 基于该信息确定至少一个脉冲的至少一个特性。 生成包括至少一个脉冲的脉冲激光束。 该方法还包括将具有至少一个确定特性的至少一个脉冲照射到预定微结构上的点中。 所述至少一个脉冲的至少一个确定的特征和其它特征足以在不引起不期望的变化的情况下局部地处理预定的微结构。

公开(公告)号：US20020130278A1

公开(公告)日：2002-09-19

申请号：US09800643

申请日：2001-03-07

Applicant: Advanced Technology Materials Inc.

Inventor： Michael C. Vella

IPC: G21K005/10 ,  H01J037/08

CPC classification number: H01J37/3171 ,  H01J37/08

Abstract: A thermoregulation system for an ion implantation system to reduce the temperature in the ion implanter and components therein, or attached thereto, to a temperature at which an ion source material, used in the ion implanter, has a vapor pressure that yields a reduced concentration of vapors. Such arrangement markedly reduces the risk of exposure to harmful vapors from the ion source material.

Abstract translation: 一种用于离子注入系统的温度调节系统，用于将离子注入机及其中或附着于其中的组分的温度降低至离子注入机中使用的离子源材料具有降低浓度的蒸汽压的温度 蒸气 这种布置显着降低了从离子源材料暴露于有害蒸气的风险。

公开(公告)号：US20020081502A1

公开(公告)日：2002-06-27

申请号：US10026772

申请日：2001-12-27

Inventor： Katsuya Hayano ,  Norio Hasegawa

IPC: G03C005/00 ,  G03F009/00 ,  G21K005/10 ,  H01J037/08

CPC classification number: G03F7/70466 ,  G03F1/32 ,  G03F1/76 ,  G03F7/70433 ,  Y10S430/143 ,  Y10S430/146

Abstract: Disclosed is a technique capable of connecting patterns of a master mask easily. Integrated circuit patterns are transferred onto pattern transfer regions of a product mask by the reduced projection exposure using a plurality of IP masks. Thereafter, the patterns of the adjacent pattern transfer regions are connected by a light-shielding pattern made of an organic film, which is formed by the exposure using an energy beam.

Abstract translation: 公开了能够容易地连接主掩模的图案的技术。 通过使用多个IP掩模的减少的投影曝光将集成电路图案转印到产品掩模的图案转印区域上。 此后，通过使用能量束的曝光形成的由有机膜制成的遮光图案连接相邻图案转印区域的图案。

公开(公告)号：US20020079465A1

公开(公告)日：2002-06-27

申请号：US09748735

申请日：2000-12-22

Inventor： Alfred M. Halling

IPC: H01J037/08

CPC classification number: H01J37/304 ,  H01J2237/31701

Abstract: An in-process charge monitor and control system (32) for an ion implanter is provided, comprising: (i) wafer support (22) upon which a plurality of wafers (W) may be positioned for implantation by an ion beam (18), the support having portions thereof disposed intermediate adjacent wafers that are more or less electrically conductive than surfaces of the wafers, the wafer support (22) further having a center (31) from which each of the plurality of wafers is substantially equidistant, the wafer support further provided with first and second apertures (64, 66) disposed substantially equidistant from the center (31); (ii) first and second electrical charge monitors (40, 38) for receiving first and second portions of the ion beam (18a, 18b) through the first and second apertures (64, 66), respectively, and for outputting first and second output signals (44, 42), respectively, indicative of an amount of ion beam current received; and (iii) a comparator (46) for comparing the first and second output signals (44, 42) and for outputting a third output signal (48) indicative of a difference in ion beam current received by first and second electrical charge monitors (40, 38), wherein the third output signal (48) is used as an input to a charge neutralization system (33) of the ion implanter to control the supply of low energy electrons produced thereby.

Abstract translation: 提供了一种用于离子注入机的过程中充电监视和控制系统（32），包括：（i）晶片支撑件（22），多个晶片（W）可以定位在其上，用于通过离子束（18）进行注入， 所述支撑件具有位于相邻晶片之间的部分，所述支撑件或多或少导电于所述晶片的表面，所述晶片支撑件还具有所述多个晶片中的每一个基本上等距离的中心），所述晶片 还设置有与中心（31）基本等距设置的第一和第二孔（64,66）; （ii）用于分别通过第一和第二孔（64,66）接收离子束（18a，18b）的第一和第二部分的第一和第二电荷监测器（40,48），并且用于输出第一和第二输出 信号（44,42）分别表示接收到的离子束电流的量; 以及（iii）比较器（46），用于比较第一和第二输出信号（44,42），并输出表示由第一和第二电荷监视器（40）接收的离子束电流的差异的第三输出信号（48） ，38），其中第三输出信号（48）用作离子注入机的电荷中和系统（33）的输入，以控制由此产生的低能电子的供应。