公开(公告)号：US06677585B2

公开(公告)日：2004-01-13

申请号：US09870512

申请日：2001-06-01

Applicant: Setsuo Nomura

Inventor： Setsuo Nomura

IPC: H01J37153

CPC classification number: H01J37/08 ,  G01N23/04

Abstract: In order to provide a method to easily and surely adjust the focal distance as in a Wobbler apparatus of the transmission type electron microscope method, a crossover 11 of a charged particle beam 2 is established between a charged particle gun 1 and an objective lens 6 and a beam deflection device 4 is provided to deflect the charged particle beam at the crossover point as the supporting point. A total controller 9 calculates an amount of the out of focus from a moving amount of the microscopic image obtained by deflecting the beam and orders the objective lens power supply to move the microscopic image as the focal distance.

Abstract translation: 为了提供如透射型电子显微镜方法的摇摆器装置中容易且可靠地调节焦距的方法，在带电粒子枪1和物镜6之间建立带电粒子束2的交叉点11和 提供了一个光束偏转装置4，用于使交叉点处的带电粒子束作为支撑点偏转。总控制器9从通过偏转光束获得的微观图像的移动量​​计算出焦距的量， 物镜电源将微观图像作为焦距移动。

公开(公告)号：US06437353B1

公开(公告)日：2002-08-20

申请号：US09453991

申请日：1999-12-02

Applicant: Gerd Benner

Inventor： Gerd Benner

IPC: H01J37153

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/05 ,  H01J37/3174

Abstract: The invention relates to a particle-optical apparatus for particle-optical mask projection. According to the invention, an energy filter is used, by which particles which are inelastically scattered in a mask plane are separated from particles which are elastically scattered in the mask plane. Particles from a selected energy range are used for the particle-optical imaging of the mask in the final image plane. The energy filter is an imaging energy filter, the mask plane being coincident with the input image plane of the energy filter or being imaged in it. The output image plane of the energy filter is imaged, reduced in scale, by a following imaging system on a wafer arranged in the projection plane. Beam deflection systems are provided in addition, by which the particle beam is deflectable in the mask plane and onto out-of-axis regions, so that different regions of the mask plane can be imaged in the image plane at successive times.

Abstract translation: 本发明涉及一种用于粒子光学掩模投影的粒子光学装置。 根据本发明，使用能量过滤器，通过其将在掩模平面中非弹性散射的颗粒与在掩模平面中弹性散射的颗粒分离。 来自所选能量范围的粒子用于最终图像平面中掩模的粒子光学成像。 能量过滤器是成像能量过滤器，掩模平面与能量过滤器的输入图像平面重合或被成像在其中。 通过在投影平面上布置的晶片上的随后的成像系统对能量滤波器的输出像平面成像，缩小比例。 此外还提供光束偏转系统，通过该光束，粒子束可以在掩模平面中偏转到轴外区域，使得掩模平面的不同区域可以在连续的时间在图像平面中成像。

公开(公告)号：US06365903B2

公开(公告)日：2002-04-02

申请号：US09824620

申请日：2001-04-02

Applicant: Marcellinus P. C. M. Krijn

Inventor： Marcellinus P. C. M. Krijn

IPC: H01J37153

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3007 ,  H01J37/3175 ,  H01J2237/04928 ,  H01J2237/31788

Abstract: According to a known projection lithography method an object is imaged on an imaging surface by means of a telescopic system of rotationally symmetrical electron lenses. The throughput during the production of integrated circuits by means of projection lithography is determined by the amount of current in the imaging electron beam; this current is limited by the resolution-limiting interaction of the electrons (Coulomb interaction). The invention allows for a larger beam current in that areas with a high current concentration are avoided. To this end, the imaging system includes five mutually perpendicular quadrupoles, so that the electrons are concentrated in line-shaped focal spots instead of a (small) circular cross-over. The system is telescopic and the imaging is stigmatic with equal magnifications in the x-z plane and the y-z plane.

Abstract translation: 根据已知的投影光刻方法，通过旋转对称电子透镜的伸缩系统将物体成像在成像表面上。 通过投影光刻生产集成电路期间的吞吐量由成像电子束中的电流量决定; 该电流受限于电子的分辨率限制相互作用（库仑相互作用）。 在避免具有高电流浓度的区域中，本发明允许较大的束流。 为此，成像系统包括五个相互垂直的四极，使得电子集中在线状焦点而不是（小）圆形交叉。 该系统是可伸缩的，成像在x-z平面和y-z平面上具有相同的放大倍数。

公开(公告)号：US06246058B1

公开(公告)日：2001-06-12

申请号：US09217220

申请日：1998-12-21

Applicant: Peter C. Tiemeijer

Inventor： Peter C. Tiemeijer

IPC: H01J37153

CPC classification number: H01J37/153

Abstract: particle-optical apparatus at a comparatively low acceleration voltage (from 0.5 kV to 5 kV). This lens defect cannot be eliminated by means of rotationally-symmetrical fields. In order to enhance the resolution nevertheless, it has already been proposed to mitigate said lens defect by means of a corrector of the Wien type. This known configuration consists of a number of electrical and magnetic multipoles. In order to adapt the corrective capacity of the corrector 28 to the strength of the objective 8 to be corrected and to achieve less severe requirements in respect of mechanical tolerances, according to the invention the corrector 28 is excited in such a manner that the trajectory of the electrons constitutes a sinusoid of a length which does not deviate more than 10% from a full sine period, upstream and downstream from the correction device there being arranged an n-pole, where n=4, 6, . . . (27, 29), at a distance which is less than ¼ of the length of the corrector.

Abstract translation: 粒子光学装置处于较低的加速电压（0.5kV至5kV）。 这种镜片缺陷不能通过旋转对称的场来消除。 为了提高分辨率，已经提出通过维恩类型的校正器来减轻所述透镜缺陷。 这种已知的配置包括多个电和磁多极。 为了使校正器28的校正能力适应于待校正的物镜8的强度并且在机械容差方面达到较不严格的要求，根据本发明，校正器28以这样一种方式激发， 电子构成长度的正弦曲线，该正弦曲线从整个正弦周期不超过10％，校正装置的上游和下游布置有n极，其中n = 4,6。 。 。 （27,29），距离校正器长度的1/4。

公开(公告)号：US06236052B1

公开(公告)日：2001-05-22

申请号：US09392686

申请日：1999-09-09

Applicant: Marcellinus P. C. M. Krijn

Inventor： Marcellinus P. C. M. Krijn

IPC: H01J37153

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3007 ,  H01J37/3175 ,  H01J2237/04928 ,  H01J2237/31788

Abstract: According to a known projection lithography method an object is imaged on an imaging surface by means of a telescopic system of rotationally symmetrical electron lenses. The throughput during the production of integrated circuits by means of projection lithography is determined by the amount of current in the imaging electron beam; this current is limited by the resolution-limiting interaction of the electrons (Coulomb interaction). The invention allows for a larger beam current in that areas with a high current concentration are avoided. To this end, the imaging system includes five mutually perpendicular quadrupoles, so that the electrons are concentrated in line-shaped focal spots instead of a (small) circular cross-over (18). The system is telescopic and the imaging is stigmatic with equal magnifications in the x-z plane and the y-z plane.

Abstract translation: 根据已知的投影光刻方法，通过旋转对称电子透镜的伸缩系统将物体成像在成像表面上。 通过投影光刻生产集成电路期间的吞吐量由成像电子束中的电流量决定; 该电流受限于电子的分辨率限制相互作用（库仑相互作用）。 在避免具有高电流浓度的区域中，本发明允许较大的束流。 为此，成像系统包括五个相互垂直的四极，使得电子集中在线状焦点而不是（小）圆形交叉（18）。 该系统是可伸缩的，成像在x-z平面和y-z平面上具有相同的放大倍数。