Invention Patent
- Patent Title: METHOD FOR FORMING A SEED AND A SEMICONDUCTOR FILM USING SAID SEED
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Application No.: CA2071192Application Date: 1992-06-12
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Publication No.: CA2071192CPublication Date: 1997-09-30
- Inventor: MORISHITA MASAKAZU , AIBA TOSHIAKI
- Applicant: CANON KK
- Assignee: CANON KK
- Current Assignee: CANON KK
- Priority: JP14329191 1991-06-14; JP14329291 1991-06-14; JP14329491 1991-06-14
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/331 ; H01L21/265
Abstract:
A seed is formed in a manner that a crystalline film is formed on an underlayer material, and then partly made amorphous by ion implanting impurities into the crystalline film, with a crystalline portion left behind in part thereof. After forming a step configuration on the underlayer material, the crystalline film is formed, and ions are implanted over its entire surface of the crystalline film.
Public/Granted literature
- CA2071192A1 METHOD FOR FORMING A SEED AND A SEMICONDUCTOR FILM USING SAID SEED Public/Granted day:1992-12-15
Information query
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