公开(公告)号：WO2004068538A2

公开(公告)日：2004-08-12

申请号：PCT/JP2004000963

申请日：2004-01-30

Applicant: CANON KK ,  AIBA TOSHIAKI

Inventor： AIBA TOSHIAKI

IPC: B25J7/00 ,  H01J37/20 ,  H01J37/305 ,  H01L20060101 ,  H01L

CPC classification number: H01J37/3056 ,  B81C99/002 ,  H01J2237/20 ,  H01J2237/3114 ,  H01J2237/31744

Abstract: A method of moving an object comprises a step of fixing the object to an object-moving means, a step of moving the object to a prescribed position by the object-moving means, and a step of releasing the object from the object-moving means; wherein the fixing step comprises forming a deposit, for fixation of the object to the object-moving means by applying a first corpuscular beam in a first gas to form a deposit; and the releasing step comprises etching the deposit by applying a second corpuscular beam in contact with a second gas.

Abstract translation: 移动物体的方法包括将物体固定到物体移动装置的步骤，通过物体移动装置将物体移动到规定位置的步骤，以及从物体移动装置释放物体的步骤 ; 其中所述固定步骤包括形成沉积物，用于通过在第一气体中施加第一粒子束以形成沉积物来将所述物体固定到所述物体移动装置; 并且释放步骤包括通过施加与第二气体接触的第二粒子束来蚀刻沉积物。

公开(公告)号：WO2013147295A3

公开(公告)日：2014-06-05

申请号：PCT/JP2013059801

申请日：2013-03-26

Applicant: CANON KK

Inventor： SHIMADA MIKIO ,  AIBA TOSHIAKI ,  IFUKU TOSHIHIRO ,  MATSUDA TAKANORI ,  KUBOTA MAKOTO ,  FURUTA TATSUO ,  HAYASHI JUMPEI

IPC: H01L41/187

CPC classification number: C04B35/49 ,  B08B7/028 ,  B41J2/045 ,  B41J2/14233 ,  B41J2202/03 ,  C04B35/4682 ,  C04B35/62645 ,  C04B2235/3208 ,  C04B2235/3215 ,  C04B2235/3236 ,  C04B2235/3244 ,  C04B2235/3248 ,  C04B2235/3249 ,  C04B2235/3262 ,  C04B2235/3263 ,  C04B2235/449 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/5454 ,  C04B2235/6562 ,  C04B2235/6567 ,  C04B2235/786 ,  C04B2235/80 ,  G02B7/021 ,  G02B7/022 ,  G02B7/023 ,  G02B27/0006 ,  G03B3/10 ,  G03B2205/0061 ,  G03B2205/0084 ,  H01L41/0471 ,  H01L41/083 ,  H01L41/1871 ,  H02N2/001 ,  H02N2/106 ,  H02N2/163

Abstract: Provided is a lead-free piezoelectric ceramics having enhanced mechanical quality factor (Qm) and mechanical strength. The piezoelectric ceramics, includes at least a first crystal grain and a second crystal grain. The first crystal grain has an average equivalent circle diameter of 2 μm or more and 30 μm or less. The first crystal grain includes a perovskite-type metal oxide represented by the following general formula (1) as a main component, and the second crystal grain includes a perovskite-type metal oxide represented by the following general formula (2) as a main component: (1) xBaTiO3-yCaTiO3-zCaZrO3; and (2) x'BaTiO3-y'CaTiO3-z'CaZrO3, provided that x, y, z, x', y', and z' satisfy x+y+z=1, x'+y'+z'=1, 0≤x'≤0.15, 0.85≤y'≤1, 0≤z'≤0.05, x>x', 0 0.

Abstract translation: 提供了具有增强的机械品质因数（Qm）和机械强度的无铅压电陶瓷。 压电陶瓷至少包括第一晶粒和第二晶粒。 第一晶粒的平均当量圆直径为2μm以上且30μm以下。 第一晶粒包括由以下通式（1）表示的钙钛矿型金属氧化物作为主要成分，第二晶粒包括由以下通式（2）表示的钙钛矿型金属氧化物作为主要成分 ：（1）xBaTiO3-yCaTiO3-zCaZrO3; 和（2）x'BaTiO3-y'CaTiO3-z'CaZrO3，条件是x，y，z，x'，y'和z'满足x + y + z = 1，x'+ y'+ z' =1,0≤x'≤0.15,0.85≤y'≤1,0≤z'≤0.05，x> x'，0 0。

公开(公告)号：WO2013147295A4

公开(公告)日：2014-07-31

申请号：PCT/JP2013059801

申请日：2013-03-26

Applicant: CANON KK

Inventor： SHIMADA MIKIO ,  AIBA TOSHIAKI ,  IFUKU TOSHIHIRO ,  MATSUDA TAKANORI ,  KUBOTA MAKOTO ,  FURUTA TATSUO ,  HAYASHI JUMPEI

IPC: H01L41/187

CPC classification number: C04B35/49 ,  B08B7/028 ,  B41J2/045 ,  B41J2/14233 ,  B41J2202/03 ,  C04B35/4682 ,  C04B35/62645 ,  C04B2235/3208 ,  C04B2235/3215 ,  C04B2235/3236 ,  C04B2235/3244 ,  C04B2235/3248 ,  C04B2235/3249 ,  C04B2235/3262 ,  C04B2235/3263 ,  C04B2235/449 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/5454 ,  C04B2235/6562 ,  C04B2235/6567 ,  C04B2235/786 ,  C04B2235/80 ,  G02B7/021 ,  G02B7/022 ,  G02B7/023 ,  G02B27/0006 ,  G03B3/10 ,  G03B2205/0061 ,  G03B2205/0084 ,  H01L41/0471 ,  H01L41/083 ,  H01L41/1871 ,  H02N2/001 ,  H02N2/106 ,  H02N2/163

Abstract: Provided is a lead-free piezoelectric ceramics having enhanced mechanical quality factor (Qm) and mechanical strength. The piezoelectric ceramics, includes at least a first crystal grain and a second crystal grain. The first crystal grain has an average equivalent circle diameter of 2 μm or more and 30 μm or less. The first crystal grain includes a perovskite-type metal oxide represented by the following general formula (1) as a main component, and the second crystal grain includes a perovskite-type metal oxide represented by the following general formula (2) as a main component: (1) xBaTiO3-yCaTiO3-zCaZrO3; and (2) x'BaTiO3-y'CaTiO3-z'CaZrO3, provided that x, y, z, x', y', and z' satisfy x+y+z=1, x'+y'+z'=1, 0≤x'≤0.15, 0.85≤y'≤1, 0≤z'≤0.05, x>x', 0 0.

Abstract translation: 提供了具有增强的机械品质因数（Qm）和机械强度的无铅压电陶瓷。 压电陶瓷至少包括第一晶粒和第二晶粒。 第一晶粒的平均当量圆直径为2μm以上且30μm以下。 第一晶粒含有下述通式（1）所示的钙钛矿型金属氧化物作为主成分，第二晶粒含有下述通式（2）所示的钙钛矿型金属氧化物作为主成分 ：（1）xBaTiO3-yCaTiO3-zCaZrO3; 和（2）x'BaTiO3-y'CaTiO3-z'CaZrO3，条件是x，y，z，x'，y'和z'满足x + y + z = 1，x'+ y'+ z' =1,0≤x'≤0.15,0.85≤y'≤1,0≤z'≤0.05，x> x'，0 0。

公开(公告)号：DE69723153T2

公开(公告)日：2004-01-29

申请号：DE69723153

申请日：1997-04-29

Applicant: CANON KK

Inventor： MITOME MASANORI ,  OKUDA MASAHIRO ,  AIBA TOSHIAKI ,  MATSUTANI SHIGEKI ,  TAKADA KAZUHIRO ,  ASAI AKIRA

IPC: H01J1/316 ,  H01J9/02 ,  H01J1/30

Abstract: An electron-emitting apparatus is constituted by an electron-emitting device having an electroconductive film including electron-emitting portions, and an electrode for attracting electrons. An electrically insulated elongated region is formed in the electroconductive film to divide the film into a higher potential side and a lower potential side. The insulated region has a substantially periodical shape formed of portions projecting to the higher potential side and portions projecting to the lower potential side. Continuous electron-emitting portions are present at at least part of the portion projecting to the higher potential side in one period of the insulated region.

公开(公告)号：EP2204867A4

公开(公告)日：2012-06-06

申请号：EP08828936

申请日：2008-09-08

Applicant: CANON KK

Inventor： KAWAKAMI SOICHIRO ,  KAKEGAWA NORISHIGE ,  KASHIWAZAKI AKIO ,  AIBA TOSHIAKI ,  UENO RIE ,  SHIMADA MIKIO ,  OJIMA KAORU ,  NOMA TAKASHI

IPC: H01M4/38 ,  B82Y99/00 ,  H01G11/06 ,  H01G11/22 ,  H01G11/30 ,  H01M4/134 ,  H01M4/36 ,  H01M4/48 ,  H01M4/58 ,  H01M4/62 ,  H01M10/052 ,  H01M10/0525 ,  H01M10/36

CPC classification number: H01M4/134 ,  H01G11/24 ,  H01G11/46 ,  H01G11/50 ,  H01M4/366 ,  H01M4/386 ,  H01M4/387 ,  H01M4/48 ,  H01M4/58 ,  H01M4/62 ,  H01M10/0525 ,  Y02E60/13 ,  Y10T428/259 ,  Y10T428/2927

Abstract: A method of producing a material capable of electrochemically storing and releasing a large amount of lithium ions is provided. The material is used as an electrode material for a negative electrode, and includes silicon or tin primary particles composed of crystal particles each having a specific diameter and an amorphous surface layer formed of at least a metal oxide, having a specific thickness. Gibbs free energy when the metal oxide is produced by oxidation of a metal is smaller than Gibbs free energy when silicon or tin is oxidized, and the metal oxide has higher thermodynamic stability than silicon oxide or tin oxide. The method of producing the electrode material includes reacting silicon or tin with a metal oxide, reacting a silicon oxide or a tin oxide with a metal, or reacting a silicon compound or a tin compound with a metal compound to react with each other.

Abstract translation: 提供了一种生产能电化学储存的材料和释放大量锂离子的方法。 所述材料被用作电极材料上的负电极，并且包括结晶颗粒各自具有特定的直径和形成的至少一个金属氧化物的无定形表面层上，具有特定厚度的由硅或锡的初级粒子。 吉布斯自由能当金属氧化物是由金属的氧化生成比吉布斯自由能小于将硅或锡氧化，并且该金属氧化物具有高于硅氧化物或锡氧化物的热力学稳定性。 制造电极材料的方法，包括使硅或锡与金属氧化物，与金属反应的氧化硅或氧化锡，或反应的硅化合物或与金属化合物与海誓山盟反应的锡化合物。

公开(公告)号：DE69928068T2

公开(公告)日：2006-07-13

申请号：DE69928068

申请日：1999-11-24

Applicant: CANON KK

Inventor： AIBA TOSHIAKI ,  MOTOI TAIKO ,  NAKAMURA KUMI ,  YAMANOBE MASATO ,  UENO RIE ,  SHIBATA MASAAKI

IPC: H01J1/30 ,  H01J31/12 ,  H01J1/316 ,  H01J29/04

Abstract: An electron-emitting device includes a substrate (1), first and second carbon films (10) disposed so as to have a first gap (7) between the first and second carbon films on a surface of the substrate, and first and second electrodes (3,4) electrically connected with the first and the second carbon films respectively, wherein the carbon film has a region showing orientation, and a direction of the orientation is in an approximately parallel direction along the substrate surface. Thereby, it is possible to improve thermal and chemical stability of a carbon film and stabilize good electron emission characteristics over a long period.

公开(公告)号：DE69911355T2

公开(公告)日：2004-07-08

申请号：DE69911355

申请日：1999-11-24

Applicant: CANON KK

Inventor： MOTOI TAIKO ,  UENO RIE ,  NAKAMURA KUMI ,  YAMANOBE MASATO ,  AIBA TOSHIAKI ,  SHIBATA MASAAKI

IPC: H01J29/04 ,  H01J1/316 ,  H01J31/12 ,  H01J1/30

Abstract: There is provided an electron-emitting device with high electron emission efficiency and with stable electron emission characteristics over a long period. The electron-emitting device has a substrate (1), first and second carbon films (21b,21a) laid with a first gap (8) in between on the surface of the substrate (1), and first and second electrodes (4b,4a) electrically connected to the first carbon film (21b) and to the second carbon film (21a), respectively. In the electron-emitting device, the distal portion (B) of the first carbon film (21B) is located above the surface of the substrate (1) at a greater distance (Hb) than the distance (Ha) of the distal portion (A) of the second carbon film (21a) above the surface of the substrate (1). In use, to effect electron emission, a higher potential is applied to the first electrode (4b) than to the second electrode (4a). An electron source is provided having a multiplicity of these devices on a common substrate (1). Such an electron source is provided in image forming apparatus opposite to an image forming member.

公开(公告)号：DE69723153D1

公开(公告)日：2003-08-07

申请号：DE69723153

申请日：1997-04-29

Applicant: CANON KK

Inventor： MITOME MASANORI ,  OKUDA MASAHIRO ,  AIBA TOSHIAKI ,  MATSUTANI SHIGEKI ,  TAKADA KAZUHIRO ,  ASAI AKIRA

IPC: H01J1/316 ,  H01J9/02 ,  H01J1/30

Abstract: An electron-emitting apparatus is constituted by an electron-emitting device having an electroconductive film including electron-emitting portions, and an electrode for attracting electrons. An electrically insulated elongated region is formed in the electroconductive film to divide the film into a higher potential side and a lower potential side. The insulated region has a substantially periodical shape formed of portions projecting to the higher potential side and portions projecting to the lower potential side. Continuous electron-emitting portions are present at at least part of the portion projecting to the higher potential side in one period of the insulated region.

公开(公告)号：BRPI0618329A2

公开(公告)日：2012-05-08

申请号：BRPI0618329

申请日：2006-11-01

Applicant: CANON KK

Inventor： AIBA TOSHIAKI ,  SANO MASAFUMI ,  KAJI NOBUYUKI

IPC: H01L29/786

Abstract: Provided is a field-effect transistor including an active layer and a gate insulating film, wherein the active layer includes an amorphous oxide layer containing an amorphous region and a crystalline region, and the crystalline region is in the vicinity of or in contact with an interface between the amorphous oxide layer and the gate insulating film.

公开(公告)号：DE69940190D1

公开(公告)日：2009-02-12

申请号：DE69940190

申请日：1999-12-21

Applicant: CANON KK

Inventor： AIBA TOSHIAKI ,  MOTOI TAIKO ,  IWASAKI TATSUYA ,  NOJIRI HIDETOSHI ,  DEN TOHRU

IPC: B81C99/00 ,  B23K15/00 ,  H01L21/306 ,  B23K15/08 ,  B81C1/00 ,  C25D11/16 ,  H01L21/302 ,  H01L21/316 ,  H01L21/461

Abstract: Provided is a method for producing regularly ordered narrow pores excellent in linearity, and a structure with such narrow pores. A method for producing a narrow pore comprises a step of radiating a particle beam onto a workpiece, and a step of carrying out anodic oxidation of the workpiece having been irradiated with the particle beam, to form a narrow pore in the workpiece.