The invention discloses an LDMOS (Laterally Diffused Metal Oxide Semiconductor) component which comprises a semiconductor substrate of a first conductive type, a region of a first conductive type, a drift region of a second conductive type, a source electrode of a second conductive type, a drain electrode of a second conductive type, a grid dielectric layer and a grid electrode, wherein the region of the first conductive type and the shift region of the second conductive type are formed in the semiconductor substrate and mutually adjacently connected; the source electrode of the second conductive type is formed in the region, the drain electrode of the second conductive type is formed in the drift region, the grid dielectric layer is positioned between the source electrode and the drain electrode and adjacently connected with the source electrode and the drift electrode, the grid electrode is positioned above the grid dielectric layer, and the first conductive type is opposite to the second conductive type. The LDMOS component is characterized by also comprising a capacitor region, wherein the capacitor region is positioned in the drift region between the source electrode and the drain electrode and comprises a polycrystalline silicon-doped region and an oxide layer for isolating a polycrystalline silicon region from the drift region. By adopting the LDMOS component, breakdownvoltage can be increased and smaller conduction resistance is obtained.