The invention discloses a multilayer homogeneous growth bismuth ferrite thin-film material, including a bottom electrode and a bismuth ferrite thin-film. The bottom electrode is a lanthanum nickelate thin-film, and the bismuth ferrite thin-film is sputtered and grows on the bottom electrode. The invention also discloses a preparation method of the multilayer homogeneous growth bismuth ferrite thin-film material. The method is as below: preparing the bottom electrode by a magnetron sputtering method on a silicon substrate, and preparing the bismuth ferrite thin-film by a solid state method; sputtering a layer of the bismuth ferrite thin film on the bottom electrode, rapidly annealing and repeating the above sputtering process for 6-8 times; and finally, conducting slow annealing treatment to obtain the multilayer homogeneous growth bismuth ferrite thin-film. The bismuth ferrite thin-film obtained by the invention has good uniformity, high purity, good compactness and significantly improved surface properties. The method provided by the invention utilizes magnetron sputtering method, which has strong controllability and is easy for operation and capable of precise control of film thickness.