A semiconductor device, including a semiconductor substrate, an active region formed on the semiconductor substrate, and a gate runner disposed to surround the active region. The active region includes a first cell group in which a gate electrode of each cell is directly connected to the gate runner, and a second cell group in which a gate electrode of each cell is connected to the gate runner via a di/dt mitigating element. The di/dt mitigating element is a capacitor, a resistor connected in parallel to a capacitor, or an inverse-parallel-connected diode.