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Invention Grant
CN106104234B 用于计算RF功率MOSFET的结温的方法和装置 有权

用于计算RF功率MOSFET的结温的方法和装置
Abstract:
提供了一种用于计算RF功率MOSFET的结温的方法和装置。用于计算RF功率MOSFET的结温的方法包括以下步骤：在模拟域中建立RF功率MOSFET的瞬态热阻抗模型；使用双线性变换来计算瞬态热阻抗模型在时间域中的传递函数；基于瞬态热阻抗模型在时间域中的传递函数，利用采样频率和二阶IIR滤波器结构的类型来在数字域中建立结温补偿模型；并且通过向结温补偿模型输入实际输入来计算RF功率MOSFET的结温。本发明改进了在确定RF功率MOSFET结温中的准确性。
Abstract(English):

There are provided a method and apparatus for calculating the junction temperature of an RF power MOSFET. The method for calculating the junction temperature of an RF power MOSFET, comprising steps of: establishing a transient thermal impedance model of the RF power MOSFET in analog domain; calculating a transfer function in time domain of the transient thermal impedance model using bilinear transformation; establishing a junction temperature compensation model in digital domain based on the transfer function in time domain of the transient thermal impedance model with a sampling frequency and a type of 2nd order IIR filter structure; and calculating the junction temperature of the RF power MOSFET by inputting an actual input to the junction temperature compensation model. The present invention improves accuracy in determining the junction temperature of an RF power MOSFET.

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