The invention discloses an InGaN-based yellow light-emitting diode structure. The InGaN-based yellow light-emitting diode structure comprises a substrate, and a buffer layer, an n-type layer, a preparation layer, a yellow-light multi-quantum well layer and a p-type layer are sequentially grown on the substrate from the bottom up. The characteristics lie in that the preparation layer and the yellow-light multi-quantum well layer comprise a certain number of inverted hexagonal pyramid structures with a certain size, the preparation layer is an InxGa(1-x)N thick single layer structure with the component In being high, the layer thickness of InxGa(1-x)N is 50-200nm. The InxGa(1-x)N thick single layer structure preparation layer with the component In being high can significantly relax tensile stress received by the yellow-light multi-quantum well layer, and a yellow-light multi-quantum well light-emitting layer with high quality is acquired. Meanwhile, the inverted hexagonal pyramid structures located in a region of the preparation layer and the yellow-light multi-quantum well layer can greatly improve the injection efficiency of p-type carries (holes), and thus the light-emitting efficiency of a yellow light-emitting diode is improved.