Semiconductor devices, methods of manufacture thereof, and methods of singulating semiconductor devices are disclosed. In some embodiments, a method of manufacturing a semiconductor device includes forming a trench in a substrate, the trench being formed within a first side of the substrate and disposed around a portion of the substrate. A first insulating material is formed over the first side of the substrate and the trench, and a second insulating material is formed over the first insulating material. Apertures are formed in the second insulating material and the first insulating material over the portion of the substrate. Features are formed in the apertures, and a carrier is coupled to the features and the second insulating material. A second side of the substrate is planarized, the second side of the substrate being opposite the first side of the substrate. The second insulating material is removed, and the carrier is removed. The invention relates to semiconductor devices, methods of manufacture thereof, and methods of singulating semiconductor devices.